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    IXYS Corporation IXST30N60CD1

    IGBT 600V 55A TO268AA
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    IXST30N60CD1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXST30N60CD1 IXYS 600V high speed IGBT with diode Original PDF

    IXST30N60CD1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXSH30N60CD1

    Abstract: IXSK30N60CD1 IXST30N60CD1
    Text: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR


    Original     		PDF N60CD1 O-247AD IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    n60c

    Abstract: IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 TO-264 Jedec package outline N60CD1
    Text: ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 V CES I C25 V CE sat t fi Short Circuit SOA Capability = = = = 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF N60CD1 O-247AD 150OC n60c IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 TO-264 Jedec package outline N60CD1

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR


    Original     		PDF N60CD1 N60CD1 O-247AD O-264 O-268 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK30N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C


    OCR Scan     		PDF N60CD1 IXSK30N60CD1 O-247AD

    diode u2 40

    Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
    Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ *q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style * ► N eiV ISOPLUS247™ (R) Case style


    OCR Scan     		PDF O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60

    n60c

    Abstract: ci lm 317
    Text: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM


    OCR Scan     		PDF IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 O-247AD Cto150 O-268 O-264 n60c ci lm 317