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    IXSN55N120A Price and Stock

    IXYS Corporation IXSN55N120A

    IGBT MOD 1200V 110A 500W SOT227B
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    DigiKey IXSN55N120A Tube
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    IXYS Corporation IXSN55N120AU1

    IGBT MOD 1200V 110A 500W SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSN55N120AU1 Tube
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    IXYS Integrated Circuits Division IXSN55N120A

    IGBT MOD.SINGLE 55A 1200V H.VOLTAGE SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXSN55N120A
    • 1 $23.18262
    • 10 $21.666
    • 100 $21.666
    • 1000 $21.666
    • 10000 $21.666
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    IXYS Integrated Circuits Division IXSN55N120AU1

    IGBT MOD.DIODE SINGLE 55A 1200V H.VOLTAGE SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXSN55N120AU1
    • 1 $23.18262
    • 10 $21.666
    • 100 $21.666
    • 1000 $21.666
    • 10000 $21.666
    		Get Quote

    IXSN55N120A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXSN55N120A IXYS 1200V high voltage IGBT Original PDF
    IXSN55N120AU1 IXYS IGBT, N-Channel IGBT, VCG 1200 V, VCE 1200 V, IC 110 A Original PDF

    IXSN55N120A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20


    Original     		PDF 55N120A OT-227

    IXSN55N120A

    Abstract: on 3150
    Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous


    Original     		PDF 55N120A OT-227 IXSN55N120A on 3150

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous


    Original     		PDF 55N120A OT-227

    T0263

    Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
    Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES


    OCR Scan     		PDF T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B

    case style

    Abstract: IXSH35N100A
    Text: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES


    OCR Scan     		PDF O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A