IXSK 30 N N60 Search Results

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Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR	Original	PDF	N60CD1 N60CD1 O-247AD O-264 O-268 O-268AA
IXSH30N60CD1 Abstract: IXSK30N60CD1 IXST30N60CD1 Text: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR	Original	PDF	N60CD1 O-247AD IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	PDF	O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
BERULUB FR 16 B Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power	Original	PDF	IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	PDF	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1
n60c Abstract: ci lm 317 Text: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM	OCR Scan	PDF	IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 O-247AD Cto150 O-268 O-264 n60c ci lm 317