Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXSH50N60B Search Results

    SF Impression Pixel

    IXSH50N60B Price and Stock

    IXYS Corporation IXSH50N60B

    IGBT 600V 75A 250W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH50N60B Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Integrated Circuits Division IXSH50N60B

    IGBT DIS.SINGLE 50A 600V H.SPEED TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXSH50N60B
    • 1 $10.74986
    • 10 $10.74986
    • 100 $9.7726
    • 1000 $9.7726
    • 10000 $9.7726
    Get Quote

    IXSH50N60B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXSH50N60B IXYS 600V IGBT high speed Original PDF

    IXSH50N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS V CES ^C25 V CE sat Short Circuit SOA Capability = 600 V = 75 A = 2.5 V ?c G TO-247 SMD (\Y m A Maximum Ratings Sym bol Test C onditions VCES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 M£i


    OCR Scan
    PDF IXSH50N60B IXSH50N60BS O-247

    Untitled

    Abstract: No abstract text available
    Text: O IX Y S Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS VCES = 600 V C = Collector, TAB = Collector Short Circuit SOA Capability Symbol Test Conditions VCES ^ v CGR Maximum Ratings = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MO 600 V v GES


    OCR Scan
    PDF IXSH50N60B IXSH50N60BS

    3850 mos

    Abstract: GK 087 GEM X 365
    Text: IGBT High Speed IXSH50N60B IXSH 50N60BS Short Circuit SOA Capability Test Conditions v CES T j = 25“C to 150°C 600 V v CGR ^ = 25°C to 150°C; R0E = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient ±30 V Maximum Ratings A ^C25 T c = 25°C, limited by leads


    OCR Scan
    PDF IXSH50N60B 50N60BS O-247 3850 mos GK 087 GEM X 365

    T0263

    Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
    Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES


    OCR Scan
    PDF T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B

    case style

    Abstract: IXSH35N100A
    Text: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES


    OCR Scan
    PDF O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A