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    IXYS Corporation

    IXYS Corporation IXGR60N60C3D1

    IGBT PT 600V 75A ISOPLUS247
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    DigiKey IXGR60N60C3D1 Tube 30
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    IXGR60N60C3D1 Datasheets (1)

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    IXGR60N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 170W ISOPLUS247 Original PDF

    IXGR60N60C3D1 Datasheets Context Search

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    60N60C3

    Abstract: G60N60 g60n60c3 IXGR60N60C3D1 IF110 ISOPLUS247 G60N
    Text: IXGR60N60C3D1 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V


    Original     		IXGR60N60C3D1 IC110 IF110 247TM 60N60C3 01-23-09-D G60N60 g60n60c3 IXGR60N60C3D1 IF110 ISOPLUS247 G60N PDF

    g60n

    Abstract: 60N60C
    Text: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		IXGR60N60C3D1 IC110 IF110 60N60C3 01-15-10-E g60n 60N60C PDF

    G60N60

    Abstract: IXGR60N60C3D1 IF110 ISOPLUS247 g60n60c 01-15-10-E
    Text: IXGR60N60C3D1 GenX3TM 600V IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGR60N60C3D1 IC110 IF110 60N60C3 01-15-10-E G60N60 IXGR60N60C3D1 IF110 ISOPLUS247 g60n60c 01-15-10-E PDF