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    IXGP90N33TBM-A

    Abstract: IXGP90N33 90n33 IXGP90N
    Text: IXGP90N33TBM-A Trench gate IGBT For PDP Applications VCES = 330V = 360A ICP VCE sat ≤ 1.60V OVERMOLDED TO-220 W/ FORMED LEAD (IXGP.M-A) Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V VGEM Transient ±30 V IC25 TC = 25°C ICP TJ ≤ 150°C, tp ≤ 1 s


    Original     		PDF IXGP90N33TBM-A O-220 90N33TB 5-27-08-B IXGP90N33TBM-A IXGP90N33 90n33 IXGP90N

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250