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    IXGK50N120C3H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGK50N120C3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 95A 460W TO264 Original PDF

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    IXGK50N120C3H1

    Abstract: IC100 PLUS247 g50n120c3 SIEMENS f g50n
    Text: Advance Technical Information GenX3TM 1200V IGBTs w/ Diode IXGK50N120C3H1 IXGX50N120C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM VCES = IC100 = VCE sat ≤


    Original     		PDF IXGK50N120C3H1 IXGX50N120C3H1 O-264 IC100 50N120C3H1 IXGK50N120C3H1 IC100 PLUS247 g50n120c3 SIEMENS f g50n

    IXGK50N120C3H1

    Abstract: IXGX50N120C3H1 g50n120c3
    Text: Preliminary Technical Information IXGK50N120C3H1 IXGX50N120C3H1 GenX3TM 1200V IGBTs w/ Diode High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1200V 50A 4.2V 64ns TO-264 (IXGK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXGK50N120C3H1 IXGX50N120C3H1 IC100 O-264 IC100 IF110 PLUS247 50N120C3H1 IXGX50N120C3H1 g50n120c3

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    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 1200V IGBTs w/ Diode IXGK50N120C3H1 IXGX50N120C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1200V 50A 4.2V 64ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IXGK50N120C3H1 IXGX50N120C3H1 IC100 O-264 IF110 50N120C3H1