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    IXFX360N10T Search Results

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    IXFX360N10T Price and Stock

    Littelfuse Inc IXFX360N10T

    MOSFET N-CH 100V 360A PLUS247-3
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    DigiKey IXFX360N10T Tube 298 1
    • 1 $13.22
    • 10 $13.22
    • 100 $8.509
    • 1000 $13.22
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    Newark IXFX360N10T Bulk 300
    • 1 -
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    • 100 -
    • 1000 $8.23
    • 10000 $8.23
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    IXYS Corporation IXFX360N10T

    MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFX360N10T 859
    • 1 $13.22
    • 10 $10.75
    • 100 $8.5
    • 1000 $7.85
    • 10000 $7.85
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    Future Electronics IXFX360N10T Tube 300
    • 1 -
    • 10 -
    • 100 $7.82
    • 1000 $7.7
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    TME IXFX360N10T 30 1
    • 1 $13.18
    • 10 $10.4
    • 100 $9.38
    • 1000 $9.38
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    New Advantage Corporation IXFX360N10T 72 1
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    • 100 $17.73
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    IXFX360N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX360N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 360A PLUS247 Original PDF

    IXFX360N10T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    360N10T

    Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
    Text: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N10T IXFX360N10T 130ns O-264 360N10T PLUS-247 IXFK360N10T IXFX360N10T PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFK360N10T IXFX360N10T 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N10T IXFX360N10T 130ns O-264 360N10T PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N10T IXFX360N10T O-264 130ns 360N10T PDF