16N90
Abstract: IXFH16N90 IXFX16N90
Text: IXFH16N90 IXFX16N90 HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS on = 0.65 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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IXFH16N90
IXFX16N90
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16N90
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16N90
Abstract: No abstract text available
Text: IXFH16N90 IXFX16N90 HiPerFET Power MOSFETs V DSS I D25 D DS on N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family = 900 V = 16 A = 0.65 Q trr < 200 ns Prelim inary data Symbol V DSS v™ V GS v GS* Test Conditions T, = 25°C to 150°C T,J = 25°C to 150°C;’ RGS
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IXFH16N90
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16N90
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Abstract: No abstract text available
Text: □ IXYS HiPerFET V DSS IXFH16N90 IXFX16N90 Power MOSFETs ^D25 R DS on N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family = 900 V = 16 A = 0.65 Q t < 200 ns Preliminarydata Symbol TestConditions V T j = 25°C to 150°C T j = 25°C to 150°C; RGS = 1 M£i
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IXFH16N90
IXFX16N90
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