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    IXFV26N60PS Search Results

    IXFV26N60PS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFV26N60PS IXYS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Original PDF

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    IXFH26N60P

    Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS O-247) 26N60P 26N60P 26N60PS O-247 IXFH26N60P IXFV26N60P 26n60 26N60PS IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60

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    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS 26N60P 26N60P 26N60PS O-247 PLUS220SMD