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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchTM HiperFETTM Power MOSFETs VDSS ID25 IXFT120N25T IXFH120N25T = 250V = 120A ≤ 23mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFT120N25T IXFH120N25T O-268 O-247 120N25T

    IXFH120N25T

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFT120N25T IXFH120N25T TrenchTM HiperFETTM Power MOSFETs VDSS ID25 = 250V = 120A ≤ 23mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFT120N25T IXFH120N25T O-268 O-247 120N25T IXFH120N25T