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    IXYS Corporation IXFR66N50Q2

    MOSFET N-CH 500V 50A ISOPLUS247
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    IXFR66N50Q2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFR66N50Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFR66N50Q2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 50A ISOPLUS247 Original PDF

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    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR66N50Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 50A Ω 85mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings


    Original
    PDF IXFR66N50Q2 250ns ISOPLUS247 E153432 66N50Q2 05-28-08-C

    66N50

    Abstract: ISOPLUS247 IXFR66N50Q2
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFR66N50Q2 Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25


    Original
    PDF IXFR66N50Q2 728B1 123B1 728B1 065B1 66N50 ISOPLUS247 IXFR66N50Q2

    IXFR66N50Q2

    Abstract: ISOPLUS247 66N50Q2
    Text: HiPerFETTM Power MOSFET Q2-Class IXFR66N50Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXFR66N50Q2 250ns ISOPLUS247 E153432 66N50Q2 05-28-08-C IXFR66N50Q2 ISOPLUS247 66N50Q2