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    IXYS Corporation IXFQ10N80P

    MOSFET N-CH 800V 10A TO3P
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    IXFQ10N80P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFQ10N80P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 10A TO-3P Original PDF

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    IXFH10N80P

    Abstract: IXFH10N80 IXFQ10N80P IXFA10N80P IXFP10N80P IXFP10N80
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 10 A Ω 1.1 250 ns TO-263 (IXFA) Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P O-263 IXFH10N80P IXFH10N80 IXFQ10N80P IXFA10N80P IXFP10N80P IXFP10N80

    IXFP10N80P

    Abstract: 10N80P IXFH10N80P IXFA10N80P IXFQ10N80P IXFH10N80 10n80 MOSFET 800V 10A TO-3P IXFP10N80
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS D (TAB) Symbol Test Conditions


    Original     		PDF IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P O-220AB O-263 250ns O-247 IXFP10N80P 10N80P IXFH10N80P IXFA10N80P IXFQ10N80P IXFH10N80 10n80 MOSFET 800V 10A TO-3P IXFP10N80

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω


    Original     		PDF IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P O-220AB O-263 250ns O-247