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    IXFN38N100Q2 Price and Stock

    IXYS Corporation IXFN38N100Q2

    MOSFET Modules 38 Amps 1000V 0.25 Rds
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    Mouser Electronics IXFN38N100Q2
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    IXYS Integrated Circuits Division IXFN38N100Q2

    MOSFET N-CH 1000V 38A SOT-227 / N-Channel 1000 V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B
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    Win Source Electronics IXFN38N100Q2 2,118
    • 1 $52.283
    • 10 $34.856
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    IXFN38N100Q2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN38N100Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFN38N100Q2 Datasheets Context Search

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    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000V ID25 = 38A Ω RDS on ≤ 250mΩ N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr ≤ 300ns trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN38N100Q2 300ns OT-227 E153432 38N100Q2 5-27-08-B

    IXFN38N100Q2

    Abstract: IXFB38N100Q2
    Text: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF IXFN38N100Q2 OT-227 E153432 728B1 123B1 728B1 065B1 IXFN38N100Q2 IXFB38N100Q2

    IXFN38N100Q2

    Abstract: 38N100Q2 IXFN38N100 38N100
    Text: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000V ID25 = 38A Ω RDS on ≤ 250mΩ N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr ≤ 300ns trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN38N100Q2 300ns OT-227 E153432 38N100Q2 5-27-08-B IXFN38N100Q2 IXFN38N100 38N100