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    IXFN32N120P Search Results

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    IXFN32N120P Price and Stock

    Littelfuse Inc IXFN32N120P

    MOSFET N-CH 1200V 32A SOT-227B
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    DigiKey IXFN32N120P Tube 1
    • 1 $71.99
    • 10 $65.241
    • 100 $58.4917
    • 1000 $58.4917
    • 10000 $58.4917
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    Verical IXFN32N120P 210 1
    • 1 $71.59
    • 10 $64.97
    • 100 $56.44
    • 1000 $55.86
    • 10000 $55.86
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    Arrow Electronics IXFN32N120P 210 54 Weeks 1
    • 1 $71.59
    • 10 $64.97
    • 100 $56.44
    • 1000 $55.86
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    IXYS Corporation IXFN32N120P

    Discrete Semiconductor Modules 32 Amps 1200V
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    Mouser Electronics IXFN32N120P 637
    • 1 $73.43
    • 10 $66.55
    • 100 $59.59
    • 1000 $59.59
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    TTI IXFN32N120P Tube 300
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    • 1000 $55.69
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    TME IXFN32N120P 1
    • 1 $87.57
    • 10 $69.5
    • 100 $69.5
    • 1000 $69.5
    • 10000 $69.5
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    New Advantage Corporation IXFN32N120P 18 1
    • 1 -
    • 10 $140.17
    • 100 $130.82
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    IXFN32N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFN32N120P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 32A SOT-227B Original PDF

    IXFN32N120P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN32N120P 32N120P

    32N120P

    Abstract: ixfn32n120p IXFN32N120
    Text: PolarTM Power MOSFET HiPerFETTM IXFN32N120P VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN32N120P 300ns 32N120P 4-03-08-B ixfn32n120p IXFN32N120

    IXFN32N120P

    Abstract: 32N120P 32N120
    Text: IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN32N120P 300ns E153432 Nm/l100 100ms 32N120P 3-04-10-D IXFN32N120P 32N120

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P