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    IXFN30N120P Search Results

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    IXFN30N120P Price and Stock

    Littelfuse Inc IXFN30N120P

    MOSFET N-CH 1200V 30A SOT-227B
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    DigiKey IXFN30N120P Tube 300
    • 1 -
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    • 1000 $49.73357
    • 10000 $49.73357
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    IXYS Corporation IXFN30N120P

    Discrete Semiconductor Modules 30 Amps 1200V 0.35 Rds
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    Mouser Electronics IXFN30N120P
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    TTI IXFN30N120P Tube 300
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    • 1000 $49.72
    • 10000 $49.72
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    TME IXFN30N120P 1
    • 1 $75.2
    • 10 $59.71
    • 100 $59.71
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    New Advantage Corporation IXFN30N120P 24 1
    • 1 -
    • 10 $119.18
    • 100 $111.24
    • 1000 $111.24
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    IXFN30N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFN30N120P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A SOT-227B Original PDF

    IXFN30N120P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFN30N120P

    Abstract: diode 1200v 30A 30N120P
    Text: IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C IXFN30N120P diode 1200v 30A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFN30N120P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P