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    IXFL38N100P Search Results

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    IXFL38N100P Price and Stock

    Littelfuse Inc IXFL38N100P

    MOSFET N-CH 1000V 29A I5PAK
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    DigiKey IXFL38N100P Tube 300
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    Newark IXFL38N100P Bulk 300
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    RS IXFL38N100P Bulk 8 Weeks 25
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    IXYS Corporation IXFL38N100P

    MOSFETs 38 Amps 1000V 0.21 Rds
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    Mouser Electronics IXFL38N100P
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    Verical IXFL38N100P 25 2
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    Future Electronics IXFL38N100P Tube 26 Weeks 25
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    Bristol Electronics IXFL38N100P 49
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    TTI IXFL38N100P Tube 300
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    TME IXFL38N100P 25 1
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    IXFL38N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFL38N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 29A I5-PAK Original PDF

    IXFL38N100P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS


    Original     		IXFL38N100P 300ns 338B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL38N100P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions


    Original     		IXFL38N100P 300ns 100ms 38N100 7-14-09-D PDF

    tl 078

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings


    Original     		IXFL38N100P 300ns 338B2 tl 078 PDF

    IXFL38N100P

    Abstract: 38N100
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol


    Original     		IXFL38N100P 300ns 100ms 38N100 7-14-09-D IXFL38N100P PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF