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    IXYS Corporation IXFL36N110P

    MOSFET N-CH 36A ISOPLUS264
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    IXFL36N110P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL36N110P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 26A Ω 260mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings


    Original     		IXFL36N110P 300ns 338B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 26A Ω 260mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings


    Original     		IXFL36N110P 300ns 338B2 PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF

    IXYS 1210

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS


    Original     		IXFL36N100P 300ns 300hnical 338B2 IXYS 1210 PDF