Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFL32N120P Search Results

    SF Impression Pixel

    IXFL32N120P Price and Stock

    Littelfuse Inc IXFL32N120P

    MOSFET N-CH 1200V 24A I5PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFL32N120P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $43.79053
    • 10000 $43.79053
    		Buy Now
    Newark IXFL32N120P Bulk 300
    • 1 -
    • 10 -
    • 100 $43.69
    • 1000 $43.69
    • 10000 $43.69
    		Buy Now

    IXYS Corporation IXFL32N120P

    MOSFETs 32 Amps 1200V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFL32N120P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $44.06
    • 10000 $44.06
    		Get Quote
    Future Electronics IXFL32N120P Tube 26 Weeks 25
    • 1 -
    • 10 -
    • 100 $47.23
    • 1000 $47.23
    • 10000 $47.23
    		Buy Now
    TTI IXFL32N120P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $43.79
    • 10000 $43.79
    		Buy Now
    TME IXFL32N120P 25 1
    • 1 $68.34
    • 10 $54.23
    • 100 $50.64
    • 1000 $50.64
    • 10000 $50.64
    		Buy Now

    IXYS Integrated Circuits Division IXFL32N120P

    MOSFET DIS.24A 1200V N-CH ISOPLUSI5-PAC POLAR THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFL32N120P
    • 1 $82.03005
    • 10 $82.03005
    • 100 $76.6636
    • 1000 $76.6636
    • 10000 $76.6636
    		Get Quote

    IXFL32N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFL32N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 24A I5-PAK Original PDF

    IXFL32N120P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32N12

    Abstract: 32N120P
    Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions


    Original     		PDF IXFL32N120P 300ns 100ms 32N120P 1-22-10-C 32N12

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXFL32N120P 300ns 338B2

    123B16

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFL32N120P 300ns 338B2 123B16

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL32N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFL32N120P 300ns 100ms 32N120P 1-22-10-C

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P