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    IXFL30N120P Search Results

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    IXFL30N120P Price and Stock

    IXYS Corporation IXFL30N120P

    MOSFET N-CH 1200V 18A I5PAK
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    IXFL30N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFL30N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 18A I5-PAK Original PDF

    IXFL30N120P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXFL30N120P 300ns 30N120P 9-20-07-B

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL30N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXFL30N120P 300ns 30N120P 02-12-10-D

    IXFL30N120P

    Abstract: 1200v18a 30N120P 380m
    Text: IXFL30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXFL30N120P 300ns 30N120P 02-12-10-D IXFL30N120P 1200v18a 380m

    IXFL30N120P

    Abstract: 1200v18a 30N120P
    Text: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXFL30N120P 300ns 30N120P 4-01-08-C IXFL30N120P 1200v18a 30N120P

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P