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    IXFH70N Price and Stock

    IXYS Corporation IXFH70N15

    MOSFET N-CH 150V 70A TO247AD
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    DigiKey IXFH70N15 Tube
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    Littelfuse Inc IXFH70N65X3

    MOSFET 70A 650V X3 TO247
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    DigiKey IXFH70N65X3 Tube 30
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    • 100 $10.57444
    • 1000 $9.58311
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    Littelfuse Inc IXFH70N30Q3

    MOSFET N-CH 300V 70A TO247AD
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    DigiKey IXFH70N30Q3 Tube 300
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    Littelfuse Inc IXFH70N20Q3

    MOSFET N-CH 200V 70A TO247AD
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    DigiKey IXFH70N20Q3 Tube 30
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    Verical IXFH70N20Q3 90 1
    • 1 $12.915
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    • 100 $9.354
    • 1000 $8.976
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    Arrow Electronics IXFH70N20Q3 90 44 Weeks 1
    • 1 $12.915
    • 10 $12.915
    • 100 $9.354
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    New Advantage Corporation IXFH70N20Q3 60 1
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    IXYS Corporation IXFH70N65X3

    MOSFET DISCRETE MOSFET 70A 650V X3 TO
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    Mouser Electronics IXFH70N65X3
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    TTI IXFH70N65X3 Tube 300
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    • 1000 $9.58
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    TME IXFH70N65X3 1
    • 1 $14.4
    • 10 $11.48
    • 100 $9.63
    • 1000 $9.63
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    Find more IXFH70N price and stock on Findchips.com

    IXFH70N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFH70N15 IXYS 150V HiPerFET power MOSFET Original PDF
    IXFH70N15 IXYS HiPerFET Power MOSFET Original PDF
    IXFH70N20Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 70A TO-247 Original PDF
    IXFH70N30Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 70A TO-247 Original PDF

    IXFH70N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    70N30

    Abstract: No abstract text available
    Text: Advance Technical Information IXFT70N30Q3 IXFH70N30Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 300V = 70A Ω ≤ 54mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFT70N30Q3 IXFH70N30Q3 O-268 O-247 70N30Q3 70N30

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT70N30Q3 IXFH70N30Q3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 300V = 70A Ω ≤ 54mΩ TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings


    Original     		PDF IXFT70N30Q3 IXFH70N30Q3 O-268 70N30Q3

    IXFH70N20Q3

    Abstract: 70N20
    Text: Advance Technical Information IXFT70N20Q3 IXFH70N20Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 200V = 70A Ω ≤ 40mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFT70N20Q3 IXFH70N20Q3 O-268 O-247 70N20Q3 IXFH70N20Q3 70N20

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT70N20Q3 IXFH70N20Q3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 200V = 70A Ω ≤ 40mΩ TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings


    Original     		PDF IXFT70N20Q3 IXFH70N20Q3 O-268 70N20Q3

    IXFD75N10

    Abstract: IXFD180N07-9X IXFD340N07-9Y
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C


    Original     		PDF IXFH76N07-12 IXFX180N10 IXFN340N07 IXFX15N8085 IXFH67N10 IXFH75N10 IXFH75N10Q IXFH80N10Q IXFK170N10 IXFN230N10 IXFD75N10 IXFD180N07-9X IXFD340N07-9Y

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


    OCR Scan     		PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90