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Littelfuse Inc IXFH6N100F MOSFET N-CH 1000V 6A TO247
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DigiKey	IXFH6N100F	Tube			300	1 - 10 - 100 - 1000 $6.83553 10000 $6.83553	Buy Now
IXYS Corporation IXFH6N100F MOSFETs HiPerRF Power Mosfet 1000V 6A
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TTI	IXFH6N100F	Tube			300	1 - 10 - 100 - 1000 $5.79 10000 $5.79	Buy Now

IXFH6N100F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXFH6N100F		IXYS	1000V HiPerRF power MOSFET		Original	PDF

IXFH6N100F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HiPerRFTM Power MOSFETs VDSS = ID25 = RDS on ≤ ≤ trr IXFH6N100F IXFT6N100F F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr 1000V 6A Ω 1.9Ω 250ns TO-247 (IXFH) Symbol Test Conditions	Original	PDF	IXFH6N100F IXFT6N100F 250ns O-247 O-268 O-268 338B2
IXFH6N100F Abstract: IXFT6N100F Text: IXFH6N100F IXFT6N100F HiPerRFTM Power MOSFETs VDSS = = ID25 RDS on ≤ trr ≤ F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr 1000V 6A Ω 1.9Ω 250ns TO-247 (IXFH) Symbol Test Conditions	Original	PDF	IXFH6N100F IXFT6N100F 250ns O-247 00A/s, O-268 O-268 338B2 IXFH6N100F IXFT6N100F
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	PDF	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
IXAN0011 Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408 Text: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670	Original	PDF	IXAN0011 100KHz IXAN0011 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
IXFD21N100F-8F Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005	Original	PDF	IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
102N06 Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product	Original	PDF	500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX