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    IXFH20N100 Search Results

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    IXFH20N100 Price and Stock

    Littelfuse Inc IXFH20N100P

    MOSFET N-CH 1000V 20A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH20N100P Tube 277 1
    • 1 $8.95
    • 10 $8.95
    • 100 $7.53767
    • 1000 $7.53767
    • 10000 $7.53767
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    Newark IXFH20N100P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.9
    • 10000 $7.9
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    RS IXFH20N100P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $11.66
    • 1000 $11.66
    • 10000 $11.66
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    IXYS Corporation IXFH20N100P

    MOSFETs 20 Amps 1000V 1 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH20N100P 133
    • 1 $8.95
    • 10 $8.95
    • 100 $7.53
    • 1000 $7.53
    • 10000 $7.53
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    TTI IXFH20N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.91
    • 10000 $7.54
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    TME IXFH20N100P 1
    • 1 $12.78
    • 10 $10.1
    • 100 $9.07
    • 1000 $9.07
    • 10000 $9.07
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    New Advantage Corporation IXFH20N100P 289 1
    • 1 -
    • 10 -
    • 100 $18.58
    • 1000 $17.34
    • 10000 $17.34
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    IXFH20N100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH20N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 20A TO-247 Original PDF

    IXFH20N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH20N100P IXFT20N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		IXFH20N100P IXFT20N100P 300ns O-247 20N100P 04-01-08-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000


    Original     		IXFH20N100P IXFT20N100P 300ns O-247 20N100P 3-07-A PDF

    IXFH20N100

    Abstract: IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N
    Text: PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		IXFH20N100P IXFT20N100P 300ns O-247 20N100P 04-01-08-B IXFH20N100 IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF