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    IXFB38N100Q2 Price and Stock

    IXYS Corporation IXFB38N100Q2

    MOSFET N-CH 1000V 38A PLUS264
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    IXYS Integrated Circuits Division IXFB38N100Q2

    MOSFET DIS.38A 1000V N-CH PLUS264-3 HIPERFET THT
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    Ozdisan Elektronik IXFB38N100Q2
    • 1 $11.4567
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    IXFB38N100Q2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB38N100Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFB38N100Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXFB38N100Q2

    Abstract: c2075
    Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFB38N100Q2 264TM 150Volts IXFB38N100Q2 c2075 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		IXFB38N100Q2 264TM 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		IXFB38N100Q2 264TM 728B1 PDF

    IXFB38N100Q2

    Abstract: c2075 c-2075
    Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		IXFB38N100Q2 264TM 728B1 123B1 728B1 065B1 IXFB38N100Q2 c2075 c-2075 PDF

    IXFB38N100Q2

    Abstract: No abstract text available
    Text: IXFB38N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 1000V 38A Ω 250mΩ 300ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFB38N100Q2 300ns PLUS264TM( 12Volts 38N100Q2 5-27-08-B IXFB38N100Q2 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    IXFN38N100Q2

    Abstract: IXFB38N100Q2
    Text: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN38N100Q2 OT-227 E153432 728B1 123B1 728B1 065B1 IXFN38N100Q2 IXFB38N100Q2 PDF

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 PDF