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    IXDH 30N120D1 Search Results

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    IXDH 30N120D1 Price and Stock

    IXYS Corporation IXDH30N120D1

    IGBT 1200V 60A 300W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXDH30N120D1 Tube 30
    • 1 -
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    • 100 $7.686
    • 1000 $7.686
    • 10000 $7.686
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    Newark IXDH30N120D1 Bulk 1
    • 1 $11.14
    • 10 $10.24
    • 100 $9.23
    • 1000 $8.65
    • 10000 $8.65
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    Bristol Electronics IXDH30N120D1 10
    • 1 -
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    • 100 -
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    TME IXDH30N120D1 1
    • 1 $10.18
    • 10 $7.69
    • 100 $7.02
    • 1000 $7.02
    • 10000 $7.02
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    Littelfuse Inc IXDH30N120D1

    Disc Igbt Npt-Standard/Tube |Littelfuse IXDH30N120D1
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    Newark IXDH30N120D1 Bulk 30
    • 1 -
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    • 100 $9.24
    • 1000 $8.58
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    IXYS Integrated Circuits Division IXDH30N120D1

    IGBT DIS.DIODE SINGLE 38A 1200V H.VOLTAGE TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXDH30N120D1
    • 1 $10.80711
    • 10 $10.80711
    • 100 $10.1001
    • 1000 $10.1001
    • 10000 $10.1001
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    IXDH 30N120D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXDH30N120D1 IXYS 1200V high voltage IGBT with optional diode Original PDF

    IXDH 30N120D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30N120D1

    Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
    Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1


    Original     		PDF 30N120 30N120 IXDH30N120 D-68623 30N120D1 30n120d T30N120 ixdh 30n120d1

    3 phase IGBT inverter

    Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
    Text: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,


    Original     		PDF O-247 PLUS247TM, 120N20 26N50, 5A/1600V 0A/600V 30-06AR) 000V/20A 3 phase IGBT inverter igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    30N120

    Abstract: 30n120d
    Text: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l


    OCR Scan     		PDF 30N120 30N120 IXDT30N120 O-247 D-68623 30n120d

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan     		PDF O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan     		PDF 20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50