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    IW407 Search Results

    IW407 Datasheets (5)

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    IW4070BD Integral Quad exclusive-OR gate, high-voltage silicon-gate CMOS Original PDF
    IW4070BN Integral Quad exclusive-OR gate, high-voltage silicon-gate CMOS Original PDF
    IW4071B Unknown Quad 2-Input OR Gate High-Voltage Silicon-Gate CMOS Original PDF
    IW4071BD Integral Quad 2-input OR gate, high-voltage silicon-gate CMOS Original PDF
    IW4071BN Integral Quad 2-input OR gate, high-voltage silicon-gate CMOS Original PDF

    IW407 Datasheets Context Search

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    IW4070BD

    Abstract: IW4070BN
    Text: TECHNICAL DATA IW4070B Quad Exclusive-OR Gate High-Voltage Silicon-Gate CMOS The IW4070B types consist of four independent Exclusive-OR gates. The IW4070B provides the system designer with a means for direct implementation of the Exlusive-OR function. • Operating Voltage Range: 3.0 to 18 V


    Original     		IW4070B IW4070B IW4070BN IW4070BD PDF

    IW4071B

    Abstract: IW4071BD IW4071BN
    Text: TECHNICAL DATA IW4071B Quad 2-Input OR Gate High-Voltage Silicon-Gate CMOS The IW4071B OR gates provide the system designer wich direct emplementation of the positive-logic OR function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full package-temperature


    Original     		IW4071B IW4071B IW4071BN IW4071BD 012AB) PDF

    IW4070BD

    Abstract: IW4070BN
    Text: TECHNICAL DATA IW4070B Quad Exclusive-OR Gate High-Voltage Silicon-Gate CMOS The IW4070B types consist of four independent Exclusive-OR gates. The IW4070B provides the system designer with a means for direct implementation of the Exlusive-OR function. • Operating Voltage Range: 3.0 to 18 V


    Original     		IW4070B IW4070B IW4070BN IW4070BD 012AB) PDF

    IW4071B

    Abstract: IW4071BD IW4071BN
    Text: TECHNICAL DATA IW4071B Quad 2-Input OR Gate High-Voltage Silicon-Gate CMOS The IW4071B OR gates provide the system designer wich direct emplementation of the positive-logic OR function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original     		IW4071B IW4071B IW4071BN IW4071BD IW407 PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF