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    ITS25C12

    Abstract: IGBT Transistor 1200V, 25A
    Text: ITS25C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4741 - 2.1 The ITS25C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF ITS25C12 DS4741 ITS25C12 IGBT Transistor 1200V, 25A

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4741-2.1 ITS25C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS25C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4741-2 ITS25C12 ITS25C12

    ITS25C12

    Abstract: No abstract text available
    Text: ITS25C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4741 - 2.1 The ITS25C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS25C12 DS4741 ITS25C12