Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ITS08C06 Search Results

    ITS08C06 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ITS08C06A Mitel Semiconductor Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Scan PDF
    ITS08C06B Mitel Semiconductor Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Scan PDF
    ITS08C06P Mitel Semiconductor Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Scan PDF

    ITS08C06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS4737-4

    Abstract: T0247 ac ITS08C06B ITS08C06P ITS08C08A T0247
    Text: ITS08C06 MITEL SEM ICON D UCTOR Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes March 1999, version DS4737-3.0 DS4737-4.0 April 1999 Key Parameters The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS08C06 DS4737-3 DS4737-4 ITS08C06 T0220 T0247 T0263 T0247 ac ITS08C06B ITS08C06P ITS08C08A T0247

    DS4737-4

    Abstract: No abstract text available
    Text: /t7k M ITEL ITS08C06 SE M IC O N D U C T O R Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes March 1999, version DS4737-3.0 DS4737-4.0 April 1999 The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4737-3 ITS08C06 DS4737-4 ITS08C06

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4737-2.2 ITS08C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4737-2 ITS08C06 ITS08C06