Untitled
Abstract: No abstract text available
Text: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.
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Original
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PDF
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ENN1334D
2SA1319/2SC3332
2003B
2SA1319/2SC3332]
20IB1
--20IB2
300mA
2SA1319
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2Sa1319
Abstract: 2SC3332 2SA32 2sa131 ITR03218
Text: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.
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Original
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PDF
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ENN1334D
2SA1319/2SC3332
2003B
2SA1319/2SC3332]
20IB1
--20IB2
300mA
2SA1319
2Sa1319
2SC3332
2SA32
2sa131
ITR03218
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2SC3332
Abstract: No abstract text available
Text: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.
|
Original
|
PDF
|
ENN1334D
2SA1319/2SC3332
2003B
2SA1319/2SC3332]
20IB1
--20IB2
300mA
2SA1319
2SC3332
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.
|
Original
|
PDF
|
ENN1334D
2SA1319/2SC3332
2003B
2SA1319/2SC3332]
20IB1
--20IB2
300mA
2SA1319
|
2SC3332
Abstract: 2SA1319 N133 1334B N1334C
Text: 注文コード No.N 1 3 3 4 C 2SA1319 / 2SC3332 No. N1334C N0899 ※半導体ニューズ No.1334B とさしかえてください。 2SA1319 / 2SC3332 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高電圧スイッチング用
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Original
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PDF
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2SA1319
2SC3332
N1334C
N0899
1334B
2SA1319
100mA
2SC3332
N133
1334B
N1334C
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