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    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY SEMICONDUCTORS PRELIMINARY INFORMATION D S 4 3 0 9 -1 .2 ITE23F06/ITE23C06 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE Th e IT E 23X 06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF ITE23F06/ITE23C06 37bflS22 ITE23X06 37bflS55

    LC23

    Abstract: DS4309 T0247 FAST RECOVERY DIODE 200ns
    Text: « t u GEC PLESSEY h * iiw .m iii* m PRELIMINARY INFORMATION m DS4309 -1.2 ITE23F06/ITE23C06 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE T h e IT E 2 3X 06 is a robust n-channel, enhancement mode insulated gate bipolar transistor 1GBT designed for


    OCR Scan     		PDF DS4309 ITE23F06/ITE23C06 ITE23X06 de0000 37bfl522 LC23 T0247 FAST RECOVERY DIODE 200ns