Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ENA1754A
ATP112
1450pF
PW10s)
PW10s,
--10V,
--13A
A1754-7/7
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ATP112
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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PDF
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ATP112
ENA1754
1450pF
A1754-4/4
ATP112
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Untitled
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive • • Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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Original
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PDF
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ENA1754
ATP112
1450pF
PW10s)
PW10s,
A1754-4/4
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M4563
Abstract: ATP112
Text: ATP112 注文コード No. N A 1 7 5 4 三洋半導体データシート N ATP112 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=33mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=1450pF(typ.)
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ATP112
1450pF
--10V
IT15592
IT15599
A1754-3/4
M4563
ATP112
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Untitled
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.)
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Original
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PDF
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ATP112
ENA1754A
1450pF
A1754-7/7
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Untitled
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.)
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Original
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PDF
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ATP112
ENA1754A
1450pF
150etc.
A1754-7/7
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