rg2006
Abstract: A1847 ENA1847 RG2006JS-SB
Text: RG2006JS-SB Ordering number : ENA1847 SANYO Semiconductors DATA SHEET RG2006JS-SB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications
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PDF
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ENA1847
RG2006JS-SB
O-220ML
SC-67,
OT-186use.
A1847-3/3
rg2006
A1847
ENA1847
RG2006JS-SB
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Untitled
Abstract: No abstract text available
Text: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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Original
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PDF
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RD1006LS-SB5
ENA1608
A1608-3/3
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RG2006
Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
Text: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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PDF
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RG2006JN
ENA1784
PW100s,
cycle50%
A1784-3/3
RG2006
RG2006n
RG2006JN
to220ml
ENA1784
A1784
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Untitled
Abstract: No abstract text available
Text: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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Original
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PDF
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RD1006LS-SB5
ENA1608
A1608-3/3
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A1608
Abstract: RD1006
Text: RD1006LS-SB5 注文コード No. N A 1 6 0 8 三洋半導体データシート N RD1006LS-SB5 シリコン拡散接合型 超高速スイッチングダイオード 特長 ・高耐圧である VRRM=600V 。 ・高信頼性である。 ・取り付け作業性放熱性が良い。
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PDF
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RD1006LS-SB5
N1109SA
TC-00002179
A1608-1/3
IT13677
IT14499
IT13676
IT13678
A1608-2/3
A1608
RD1006
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RG2006
Abstract: RG2006ln A1434-1
Text: RG2006LN 注文コード No. N A 1 4 3 4 A 三洋半導体データシート 半導体データシート No.NA1434 をさしかえてください。 RG2006LN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・高耐圧である VRRM=600V 。
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RG2006LN
NA1434
IT13677
IT14499
IT14498
IT13678
A1434-2/3
A1434-3/3
RG2006
RG2006ln
A1434-1
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RD1006LS-SB
Abstract: No abstract text available
Text: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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Original
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PDF
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RD1006LS-SB5
ENA1608
A1608-3/3
RD1006LS-SB
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RG2006
Abstract: A1434-1 TC-00002137 ENA1434A
Text: RG2006LN Ordering number : ENA1434A SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
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RG2006LN
ENA1434A
PW100s,
cycle50%
A1434-3/3
RG2006
A1434-1
TC-00002137
ENA1434A
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RG2006
Abstract: ENA1434 A1434-1 VRRM600V
Text: RG2006LN Ordering number : ENA1434 SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
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Original
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PDF
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RG2006LN
ENA1434
A1434-3/3
RG2006
ENA1434
A1434-1
VRRM600V
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RG2006
Abstract: RG2006n RG2006JN A1784 TO-220ML VRRM600V
Text: RG2006JN 注文コード No. N A 1 7 8 4 三洋半導体データシート N RG2006JN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・VRRM=600V ・trr=16ns typ. ・逆回復時のノイズが小さい 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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Original
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PDF
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RG2006JN
O-220ML
SC-67,
OT186A
RG2006
63010SA
IT13677
IT14499
RG2006
RG2006n
RG2006JN
A1784
TO-220ML
VRRM600V
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