Untitled
Abstract: No abstract text available
Text: ECH8601M Ordering number : EN1174A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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ECH8601M
EN1174A
A1174-7/7
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Untitled
Abstract: No abstract text available
Text: ECH8601M Ordering number : ENA1174 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.
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ECH8601M
ENA1174
A1174-4/4
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A11745
Abstract: ECH8601M 4a4035
Text: ECH8601M Ordering number : EN1174A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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Original
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PDF
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EN1174A
ECH8601M
PW10s,
1000mm2
A1174-7/7
A11745
ECH8601M
4a4035
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ECH8601M
Abstract: marking tl A11741
Text: ECH8601M Ordering number : ENA1174 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.
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Original
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PDF
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ECH8601M
ENA1174
PW10s,
1000mm20
A1174-4/4
ECH8601M
marking tl
A11741
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ECH8601M
Abstract: No abstract text available
Text: ECH8601M Ordering number : EN1174A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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Original
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PDF
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EN1174A
ECH8601M
PW10s,
1000mm2
A1174-7/7
ECH8601M
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A11741
Abstract: IT13805 A1174 ECH8601M A1174-2
Text: ECH8601M 注文コード No. N A 1 1 7 4 三洋半導体データシート N ECH8601M N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・ゲート保護用抵抗内蔵。 ・2.5V 駆動。
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ECH8601M
1000mm2
IT13857
IT13858
A1174-3/4
1000mm2
PW10s
A11741
IT13805
A1174
ECH8601M
A1174-2
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1174A ECH8601M N-Channel Power MOSFET http://onsemi.com 24V, 8A, 23mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch
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Original
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PDF
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ENA1174A
ECH8601M
PW10s,
1000mm2
12ere
A1174-7/7
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Untitled
Abstract: No abstract text available
Text: ECH8601M Ordering number : EN1174A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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Original
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PDF
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ECH8601M
EN1174A
A1174-7/7
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