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    7812 5A

    Abstract: 7812 with heatsink general purpose bridge rectifier by using diode 7812 7812 circuit diagram DBD250C A1204 dbd250 dbd250g
    Text: DBD250 Ordering number : ENA1204 SANYO Semiconductors DATA SHEET DBD250 Diffused Junction Silicon Diode 25.0A Single-Phase Bridge Rectifier Features • • • • Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200V, 600V.


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    PDF DBD250 ENA1204 DBD250C A1204-3/3 7812 5A 7812 with heatsink general purpose bridge rectifier by using diode 7812 7812 circuit diagram DBD250C A1204 dbd250 dbd250g

    A12041

    Abstract: DBD250C A1204 dbd250 A350-10 IT13664
    Text: DBD250 注文コード No. N A 1 2 0 4 三洋半導体データシート N DBD250 シリコン拡散接合型 25.0A 単相ブリッジ整流素子 特長 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。 ・せん頭逆電圧:VRM=200V, 600V。


    Original
    PDF DBD250 DBD250C DBD250G 62797GI BX-0698 73008RB TA-0858 A1204-1/3 A12041 DBD250C A1204 dbd250 A350-10 IT13664

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1204A DBD250G 25.0A Single-Phase Bridge Rectifier http://onsemi.com Features • • • • Plastic molded structure Glass passivation for high reliability Peak reverse voltage : VRM=600V Average output current : IO=25.0A Specifications


    Original
    PDF ENA1204A DBD250G A1204-2/2

    7812 5A

    Abstract: A12041 ENA1204 7812 circuit diagram DBD250C
    Text: DBD250 Ordering number : ENA1204 SANYO Semiconductors DATA SHEET DBD250 Diffused Junction Silicon Diode 25.0A Single-Phase Bridge Rectifier Features • • • • Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200V, 600V.


    Original
    PDF DBD250 ENA1204 DBD250C A1204-3/3 7812 5A A12041 ENA1204 7812 circuit diagram DBD250C