a1235
Abstract: No abstract text available
Text: SCH2310 Ordering number : ENA1235 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2310 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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SCH2310
ENA1235
PW10s,
900mm
A1235-4/4
a1235
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Untitled
Abstract: No abstract text available
Text: 6LP04MH Ordering number : ENA0457 P-Channel Silicon MOSFET 6LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC
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6LP04MH
ENA0457
900mm2â
6LP04MH/D
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A1238
Abstract: A12381
Text: EC4306C Ordering number : ENA1238 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4306C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C
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EC4306C
ENA1238
PW10s,
145mm80mm1
A1238-4/4
A1238
A12381
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A1236
Abstract: marking xs A12364 A1236-4 6lp04
Text: 6LP04S Ordering number : ENA1236 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6LP04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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6LP04S
ENA1236
PW10s,
145mm80mm1
A1236-4/4
A1236
marking xs
A12364
A1236-4
6lp04
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A1235
Abstract: A12354
Text: SCH2310 注文コード No. N A 1 2 3 5 三洋半導体データシート N SCH2310 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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SCH2310
900mm2
IT11260
--100mA
PW10s
--400mA
900mm2
IT13773
A1235
A12354
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6LP04MH
Abstract: No abstract text available
Text: 6LP04MH Ordering number : ENA0457 P-Channel Silicon MOSFET 6LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
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6LP04MH
ENA0457
900mm2
A0457-4/4
6LP04MH
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Untitled
Abstract: No abstract text available
Text: MCH6653 Ordering number : ENA1239 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6653 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6653
ENA1239
PW10s,
900mm
A1239-4/4
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A1239
Abstract: No abstract text available
Text: MCH6653 注文コード No. N A 1 2 3 9 三洋半導体データシート N MCH6653 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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MCH6653
900mm2
--100mA
IT11260
PW10s
--400mA
900mm2
IT13776
A1239
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a1237
Abstract: SSFP package A1237-1 6lp04ss 6lp04
Text: 6LP04SS Ordering number : ENA1237 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6LP04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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6LP04SS
ENA1237
PW10s,
145mm80mm1
A1237-4/4
a1237
SSFP package
A1237-1
6lp04ss
6lp04
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A1234
Abstract: 6LP04CH 6lp04
Text: 6LP04CH Ordering number : ENA1234 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6LP04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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6LP04CH
ENA1234
PW10s,
900mm20
A1234-4/4
A1234
6LP04CH
6lp04
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