Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IT11217 Search Results

    IT11217 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    82306

    Abstract: marking WZ 3HP04MH A0445
    Text: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


    Original
    PDF 3HP04MH ENA0445 900mm2 A0445-4/4 82306 marking WZ 3HP04MH A0445

    A0639-3

    Abstract: SSFP package IT11215 A0639
    Text: 3HP04SS Ordering number : ENA0639 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04SS General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original
    PDF 3HP04SS ENA0639 145mm80mm1 A0639-4/4 A0639-3 SSFP package IT11215 A0639

    EC4305C

    Abstract: No abstract text available
    Text: EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF EC4305C ENA0874 A0874-4/4 EC4305C

    Untitled

    Abstract: No abstract text available
    Text: SCH2309 Ordering number : ENA0876 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2309 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original
    PDF SCH2309 ENA0876 900mm20 A0876-4/4

    3HP04CH

    Abstract: No abstract text available
    Text: 3HP04CH Ordering number : ENA0873 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage


    Original
    PDF 3HP04CH ENA0873 900mm20 A0873-4/4 3HP04CH

    IT11215

    Abstract: No abstract text available
    Text: SCH2309 注文コード No. N A 0 8 7 6 三洋半導体データシート N SCH2309 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


    Original
    PDF SCH2309 900mm2 100mA 100mA, IT11217 900mm2 IT12739 --800mA --10V IT11215

    Untitled

    Abstract: No abstract text available
    Text: 3HP04S Ordering number : ENA0877 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage


    Original
    PDF 3HP04S ENA0877 A0877-4/4

    IT11215

    Abstract: No abstract text available
    Text: MCH6651 注文コード No. N A 0 8 7 5 三洋半導体データシート N MCH6651 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


    Original
    PDF MCH6651 900mm2 100mA 100mA, --200mA IT11217 900mm2 IT12738 IT12751 IT11215

    IT11215

    Abstract: No abstract text available
    Text: MCH6651 Ordering number : ENA0875 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6651 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original
    PDF MCH6651 ENA0875 900mm20 A0875-4/4 IT11215

    Untitled

    Abstract: No abstract text available
    Text: 3HP04MH Ordering number : ENA0445 P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS


    Original
    PDF ENA0445 3HP04MH 900mm2 A0445-4/4