82306
Abstract: marking WZ 3HP04MH A0445
Text: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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3HP04MH
ENA0445
900mm2
A0445-4/4
82306
marking WZ
3HP04MH
A0445
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A0639-3
Abstract: SSFP package IT11215 A0639
Text: 3HP04SS Ordering number : ENA0639 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04SS General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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3HP04SS
ENA0639
145mm80mm1
A0639-4/4
A0639-3
SSFP package
IT11215
A0639
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EC4305C
Abstract: No abstract text available
Text: EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C
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EC4305C
ENA0874
A0874-4/4
EC4305C
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Untitled
Abstract: No abstract text available
Text: SCH2309 Ordering number : ENA0876 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2309 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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SCH2309
ENA0876
900mm20
A0876-4/4
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3HP04CH
Abstract: No abstract text available
Text: 3HP04CH Ordering number : ENA0873 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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3HP04CH
ENA0873
900mm20
A0873-4/4
3HP04CH
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IT11215
Abstract: No abstract text available
Text: SCH2309 注文コード No. N A 0 8 7 6 三洋半導体データシート N SCH2309 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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SCH2309
900mm2
100mA
100mA,
IT11217
900mm2
IT12739
--800mA
--10V
IT11215
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Untitled
Abstract: No abstract text available
Text: 3HP04S Ordering number : ENA0877 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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3HP04S
ENA0877
A0877-4/4
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IT11215
Abstract: No abstract text available
Text: MCH6651 注文コード No. N A 0 8 7 5 三洋半導体データシート N MCH6651 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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MCH6651
900mm2
100mA
100mA,
--200mA
IT11217
900mm2
IT12738
IT12751
IT11215
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IT11215
Abstract: No abstract text available
Text: MCH6651 Ordering number : ENA0875 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6651 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6651
ENA0875
900mm20
A0875-4/4
IT11215
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Untitled
Abstract: No abstract text available
Text: 3HP04MH Ordering number : ENA0445 P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
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ENA0445
3HP04MH
900mm2
A0445-4/4
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