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    8126-1

    Abstract: D2004PE ECH8621
    Text: ECH8621 注文コード No. N 8 1 2 6 三洋半導体データシート N ECH8621 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・LIB 用途に最適。 ・2.5V 駆動。


    Original     		PDF ECH8621 900mm2 IT08384 900mm2 IT08322 IT08323 8126-1 D2004PE ECH8621

    ECH8621

    Abstract: No abstract text available
    Text: ECH8621 Ordering number : ENN8126 N-Channel Silicon MOSFET ECH8621 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8621 ENN8126 900mm20 ECH8621

    ECH8621

    Abstract: No abstract text available
    Text: ECH8621 Ordering number : ENN8126 N-Channel Silicon MOSFET ECH8621 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8621 ENN8126 900mm2 ECH8621