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    ECH8621 Search Results

    ECH8621 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ECH8621 Sanyo Semiconductor Nch+Nch Original PDF
    ECH8621-E Sanyo Semiconductor Transistor Mosfet N-CH 20V 8A 8ECH Original PDF
    ECH8621R Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF

    ECH8621 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    82306

    Abstract: ECH8621R
    Text: ECH8621R Ordering number : EN8718 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8621R EN8718 900mm2 82306 ECH8621R

    ECH8621R

    Abstract: No abstract text available
    Text: ECH8621R 注文コード No. N 8 7 1 8 三洋半導体データシート N ECH8621R N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・LiB 用途に最適。 ・2.5V 駆動。


    Original     		PDF ECH8621R 900mm2 IT08319 900mm2 IT08322 IT08323 ECH8621R

    8126-1

    Abstract: D2004PE ECH8621
    Text: ECH8621 注文コード No. N 8 1 2 6 三洋半導体データシート N ECH8621 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・LIB 用途に最適。 ・2.5V 駆動。


    Original     		PDF ECH8621 900mm2 IT08384 900mm2 IT08322 IT08323 8126-1 D2004PE ECH8621

    bsim3

    Abstract: ECH8621R
    Text: ECH8621R SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 1.02 NLX 1.7E-07 DVT2 -0.01 UB 1.26E-21 AGS 1.0 RDSW 3.86E+03 WINT NFACTOR 0.73 CDSCD PCLM 3.38 DROUT 0.96 PVAG 2.84E-03 MOBMOD 1 CAPMOD 3 CGDO 3.0E-12 CGDL 4.5E-10


    Original     		PDF ECH8621R 7E-07 26E-21 84E-03 0E-12 5E-10 0E-09 2656458E-6 2656458E-12 bsim3 ECH8621R

    ECH8621

    Abstract: No abstract text available
    Text: ECH8621 Ordering number : ENN8126 N-Channel Silicon MOSFET ECH8621 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8621 ENN8126 900mm20 ECH8621

    Untitled

    Abstract: No abstract text available
    Text: ECH8621R Ordering number : EN8718 N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF EN8718 ECH8621R 900mm2

    ECH8621

    Abstract: No abstract text available
    Text: ECH8621 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 1.066 NLX 1.70E-07 DVT2 -0.01 UB 2.40E-21 AGS -1.00 RDSW 2.74E+03 WINT NFACTOR 1.44 CDSCD PCLM 0.80 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 2.80E-12 CGDL 3.30E-10


    Original     		PDF ECH8621 70E-07 40E-21 80E-12 30E-10 0E-09 90E-08 2656458E-6 2656458E-12 41E-07 ECH8621

    ECH8621

    Abstract: No abstract text available
    Text: ECH8621 Ordering number : ENN8126 N-Channel Silicon MOSFET ECH8621 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8621 ENN8126 900mm2 ECH8621

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


    Original     		PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE