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    IT07519 Search Results

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    3LN03SS

    Abstract: is350 marking YG
    Text: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LN03SS ENN8231 3LN03SS is350 marking YG

    MCH6630

    Abstract: No abstract text available
    Text: MCH6630 Ordering number : ENN8240 N-Channel Silicon MOSFET MCH6630 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High resistance to damage from ESD TYP 300V . [with a protection diode connected between the gate and source]


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    PDF MCH6630 ENN8240 MCH6630

    MCH6630

    Abstract: TYP300V
    Text: MCH6630 注文コード No. N 8 2 4 0 三洋半導体データシート N MCH6630 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.5V 駆動。


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    PDF MCH6630 TYP300V) 900mm2 350mA 350mA, 200mA, 900mm2 IT09245 MCH6630 TYP300V

    MCH6634

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : ENN8229 N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.


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    PDF MCH6634 ENN8229 MCH6634

    SCH2401

    Abstract: 89754
    Text: SCH2401 Ordering number : EN8975 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2401 General-Purpose Switching Device Applications Features • • • • • The SCH2401 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling


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    PDF SCH2401 EN8975 SCH2401 89754

    MCH3435

    Abstract: MCH5834 SS0503SH IT1180
    Text: MCH5834 注文コード No. N A 0 5 5 8 三洋半導体データシート N MCH5834 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ MCH3435 とショットキバリアダイオード(SS0503SH)を 1 パッケージに


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    PDF MCH5834 MCH3435) SS0503SH) 900mm2 N0806PE TC-0000259 A0558-1/6 IT11802 MCH3435 MCH5834 SS0503SH IT1180

    SCH2601

    Abstract: No abstract text available
    Text: SCH2601 Ordering number : ENN8329 N-Channel and P-Channel Silicon MOSFETs SCH2601 General-Purpose Switching Device Applications Features • • • • • The SCH2601 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling


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    PDF SCH2601 ENN8329 SCH2601

    Untitled

    Abstract: No abstract text available
    Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LN03M ENN8153 3LN03M/D

    Untitled

    Abstract: No abstract text available
    Text: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LN03SS ENN8231 3LN03SS/D

    MCH3435

    Abstract: No abstract text available
    Text: MCH3435 Ordering number : ENN8238 N-Channel Silicon MOSFET MCH3435 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF MCH3435 ENN8238 900mm2 MCH3435

    SCH2401

    Abstract: TYP300V 89754
    Text: SCH2401 注文コード No. N 8 9 7 5 三洋半導体データシート N SCH2401 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    PDF SCH2401 TYP300V) 900mm2 350mA 350mA, 200mA, 900mm2 IT07521 IT08480 SCH2401 TYP300V 89754

    3LN03S

    Abstract: marking YG
    Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LN03S ENA0011 PW10s, A0011-4/4 3LN03S marking YG

    MCH6634

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : EN8229A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance


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    PDF MCH6634 EN8229A MCH6634

    MCH6634

    Abstract: TYP300V
    Text: MCH6634 注文コード No. N 8 2 2 9 A 三洋半導体データシート 半導体ニューズ No.N8229 とさしかえてください。 MCH6634 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    PDF MCH6634 N8229 TYP300V) 900mm2 350mA 350mA, 200mA, 900mm2 IT09238 MCH6634 TYP300V

    marking YG

    Abstract: 3LN03S
    Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LN03S ENA0011 A0011-4/4 marking YG 3LN03S

    SCH2815

    Abstract: 9130
    Text: SCH2815 Ordering number : ENA0369 SANYO Semiconductors DATA SHEET SCH2815 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package


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    PDF SCH2815 ENA0369 A0369-6/6 SCH2815 9130

    Untitled

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : EN8229A N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.


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    PDF EN8229A MCH6634 MCH6634

    diode marking YG

    Abstract: CISS 3010 3LN03M marking YG
    Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LN03M ENN8153 diode marking YG CISS 3010 3LN03M marking YG

    3LN03SS

    Abstract: D2006 TYP300V IT08161 IT07519
    Text: 3LN03SS 注文コード No. N 8 2 3 1 三洋半導体データシート N 3LN03SS N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。


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    PDF 3LN03SS TYP300V) 180mA 180mA, IT07518 IT07516 IT07514 IT07519 IT07521 3LN03SS D2006 TYP300V IT08161 IT07519

    MCH3435

    Abstract: MCH5834 SS0503SH
    Text: MCH5834 Ordering number : ENA0558 SANYO Semiconductors DATA SHEET MCH5834 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3435 and a schottky barrier diode (SS0503SH)


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    PDF MCH5834 ENA0558 MCH3435) SS0503SH) A0558-6/6 MCH3435 MCH5834 SS0503SH

    EC4404C

    Abstract: No abstract text available
    Text: EC4404C Ordering number : ENN8122 N-Channel Silicon MOSFET EC4404C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].


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    PDF EC4404C ENN8122 EC4404C