3LN03SS
Abstract: is350 marking YG
Text: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03SS
ENN8231
3LN03SS
is350
marking YG
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MCH6630
Abstract: No abstract text available
Text: MCH6630 Ordering number : ENN8240 N-Channel Silicon MOSFET MCH6630 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High resistance to damage from ESD TYP 300V . [with a protection diode connected between the gate and source]
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MCH6630
ENN8240
MCH6630
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MCH6630
Abstract: TYP300V
Text: MCH6630 注文コード No. N 8 2 4 0 三洋半導体データシート N MCH6630 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.5V 駆動。
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MCH6630
TYP300V)
900mm2
350mA
350mA,
200mA,
900mm2
IT09245
MCH6630
TYP300V
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MCH6634
Abstract: No abstract text available
Text: MCH6634 Ordering number : ENN8229 N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
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MCH6634
ENN8229
MCH6634
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MCH3435
Abstract: MCH5834 SS0503SH IT1180
Text: MCH5834 注文コード No. N A 0 5 5 8 三洋半導体データシート N MCH5834 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ MCH3435 とショットキバリアダイオード(SS0503SH)を 1 パッケージに
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MCH5834
MCH3435)
SS0503SH)
900mm2
N0806PE
TC-0000259
A0558-1/6
IT11802
MCH3435
MCH5834
SS0503SH
IT1180
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SCH2601
Abstract: No abstract text available
Text: SCH2601 Ordering number : ENN8329 N-Channel and P-Channel Silicon MOSFETs SCH2601 General-Purpose Switching Device Applications Features • • • • • The SCH2601 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling
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SCH2601
ENN8329
SCH2601
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Untitled
Abstract: No abstract text available
Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03M
ENN8153
3LN03M/D
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Untitled
Abstract: No abstract text available
Text: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03SS
ENN8231
3LN03SS/D
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3LN03S
Abstract: marking YG
Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03S
ENA0011
PW10s,
A0011-4/4
3LN03S
marking YG
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MCH6634
Abstract: No abstract text available
Text: MCH6634 Ordering number : EN8229A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance
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MCH6634
EN8229A
MCH6634
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MCH6634
Abstract: TYP300V
Text: MCH6634 注文コード No. N 8 2 2 9 A 三洋半導体データシート 半導体ニューズ No.N8229 とさしかえてください。 MCH6634 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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MCH6634
N8229
TYP300V)
900mm2
350mA
350mA,
200mA,
900mm2
IT09238
MCH6634
TYP300V
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SCH2601
Abstract: TYP300V
Text: SCH2601 注文コード No. N 8 3 2 9 三洋半導体データシート N SCH2601 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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SCH2601
TYP300V
900mm2
350mA
350mA,
200mA,
IT08166
900mm2
IT09569
SCH2601
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marking YG
Abstract: 3LN03S
Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03S
ENA0011
A0011-4/4
marking YG
3LN03S
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SCH2815
Abstract: 9130
Text: SCH2815 Ordering number : ENA0369 SANYO Semiconductors DATA SHEET SCH2815 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package
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SCH2815
ENA0369
A0369-6/6
SCH2815
9130
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diode marking YG
Abstract: CISS 3010 3LN03M marking YG
Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03M
ENN8153
diode marking YG
CISS 3010
3LN03M
marking YG
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3LN03SS
Abstract: D2006 TYP300V IT08161 IT07519
Text: 3LN03SS 注文コード No. N 8 2 3 1 三洋半導体データシート N 3LN03SS N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。
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3LN03SS
TYP300V)
180mA
180mA,
IT07518
IT07516
IT07514
IT07519
IT07521
3LN03SS
D2006
TYP300V
IT08161
IT07519
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MCH3435
Abstract: MCH5834 SS0503SH
Text: MCH5834 Ordering number : ENA0558 SANYO Semiconductors DATA SHEET MCH5834 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3435 and a schottky barrier diode (SS0503SH)
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MCH5834
ENA0558
MCH3435)
SS0503SH)
A0558-6/6
MCH3435
MCH5834
SS0503SH
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EC4404C
Abstract: No abstract text available
Text: EC4404C Ordering number : ENN8122 N-Channel Silicon MOSFET EC4404C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].
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EC4404C
ENN8122
EC4404C
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