2SJ616
Abstract: MARKING JW
Text: Ordering number : ENN7270A 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ616] 4.5 1.6 0.4 1.0 2.5
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ENN7270A
2SJ616
2SJ616]
25max
2SJ616
MARKING JW
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2SJ616
Abstract: No abstract text available
Text: 2SJ616 Ordering number : EN7270B P-Channel Silicon MOSFET 2SJ616 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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2SJ616
EN7270B
PW10s,
250mm20
2SJ616
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2SJ616
Abstract: TA-100075
Text: 2SJ616 注文コード No. N 7 2 7 0 B 三洋半導体データシート 半導体データシート No.N7270A をさしかえてください。 2SJ616 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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2SJ616
N7270A
250mm2
IT04764
250mm2
IT04766
IT04767
IT04768
2SJ616
TA-100075
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Marking JW
Abstract: JW Miller 2SJ616 TA-100075 2062a
Text: Ordering number : ENN7270 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ616] 4.5 1.6 0.4 1.0 2.5
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Original
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PDF
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ENN7270
2SJ616
2SJ616]
25max
Marking JW
JW Miller
2SJ616
TA-100075
2062a
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