Untitled
Abstract: No abstract text available
Text: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.
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VEC2611
ENA0425
VEC2611
900mm2â
VEC2611/D
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IT10074
Abstract: 2SJ629
Text: 2SJ629 注文コード No. N 9 0 8 4 A 三洋半導体データシート 半導体ニューズ No.N9084 をさしかえてください。 2SJ629 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。
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2SJ629
N9084
600mm2
IT10073
IT10076
IT10077
IT10072
IT10074
2SJ629
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82605
Abstract: 2SJ629
Text: 2SJ629 Ordering number : EN9084A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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2SJ629
EN9084A
600mm2
82605
2SJ629
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IC rl46
Abstract: SCH1301 RL46
Text: SCH1301 Ordering number : ENN8099A P-Channel Silicon MOSFET SCH1301 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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SCH1301
ENN8099A
900mm2
IC rl46
SCH1301
RL46
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RL46
Abstract: SCH1301
Text: SCH1301 注文コード No. N 8 0 9 9 A 三洋半導体データシート 半導体ニューズ No.N8099 とさしかえてください。 SCH1301 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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SCH1301
N8099
900mm2
IT04329
900mm2
IT08146
IT08147
RL46
SCH1301
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Untitled
Abstract: No abstract text available
Text: 2SJ629 Ordering number : EN9084 P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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EN9084
2SJ629
250mm2
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IC rl46
Abstract: VEC2611
Text: VEC2611 Ordering number : ENA0425 SANYO Semiconductors DATA SHEET VEC2611 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
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VEC2611
ENA0425
VEC2611
900mm.
A0425-6/6
IC rl46
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A0425
Abstract: VEC2611 IT-1109
Text: VEC2611 注文コード No. N A 0 4 2 5 三洋半導体データシート N VEC2611 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗の N チャネルおよび P チャネル MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合
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VEC2611
900mm2
IT11102
900mm2
IT11103
IT11104
A0425-6/6
A0425
VEC2611
IT-1109
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CPH3321
Abstract: MARKING JW
Text: CPH3321 Ordering number : ENN7747 N-Channel Silicon MOSFET CPH3321 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH3321
ENN7747
900mm2
CPH3321
MARKING JW
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SCH1301
Abstract: IC rl46
Text: SCH1301 Ordering number : ENN8099 P-Channel Silicon MOSFET SCH1301 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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SCH1301
ENN8099
900mm2
SCH1301
IC rl46
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IC rl46
Abstract: MCH3319 RL46
Text: Ordering number : ENN7199 MCH3319 P-Channel Silicon MOSFET MCH3319 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3319] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65
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ENN7199
MCH3319
MCH3319]
IC rl46
MCH3319
RL46
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CPH6320
Abstract: No abstract text available
Text: CPH6320 Ordering number : ENN8208 P-Channel Silicon MOSFET CPH6320 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH6320
ENN8208
1200mm2
25Ltd.
CPH6320
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