2SJ612
Abstract: No abstract text available
Text: 2SJ612 Ordering number : EN7178B P-Channel Silicon MOSFET 2SJ612 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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2SJ612
EN7178B
PW10s,
250mm20
2SJ612
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rl76
Abstract: ENN7178A 2SJ612
Text: Ordering number : ENN7178A 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0
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ENN7178A
2SJ612
2SJ612]
25max
rl76
ENN7178A
2SJ612
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RL76
Abstract: No abstract text available
Text: Ordering number : ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0 2.5
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ENN7178
2SJ612
2SJ612]
25max
RL76
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2SJ612-TD
Abstract: 2SJ612 TA-3522
Text: 2SJ612 注文コード No. N 7 1 7 8 B 三洋半導体データシート 半導体データシート No.N7178A をさしかえてください。 2SJ612 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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2SJ612
N7178A
250mm2
--10V
IT04255
250mm2
IT04260
2SJ612-TD
2SJ612
TA-3522
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