Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IT02660 Search Results

    IT02660 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CPH6621

    Abstract: No abstract text available
    Text: CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original
    PDF CPH6621 ENA0847 900mm20 A0847-4/4 CPH6621

    CPH6601

    Abstract: ENN7155 TA-3620
    Text: Ordering number : ENN7155 CPH6601 P-Channel Silicon MOSFET CPH6601 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2202 [CPH6601] 0.15 2.9 5 4 0.6 6


    Original
    PDF ENN7155 CPH6601 CPH6601] CPH6601 ENN7155 TA-3620

    CPH3313

    Abstract: No abstract text available
    Text: Ordering number : ENN6925 CPH3313 P-Channel Silicon MOSFET CPH3313 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3313] 2.9 0.15 0.4 0.6 3 0.2 • 2 1


    Original
    PDF ENN6925 CPH3313 CPH3313] CPH3313

    2SJ612

    Abstract: No abstract text available
    Text: 2SJ612 Ordering number : EN7178B P-Channel Silicon MOSFET 2SJ612 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original
    PDF 2SJ612 EN7178B PW10s, 250mm20 2SJ612

    CPH6621

    Abstract: No abstract text available
    Text: CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original
    PDF CPH6621 ENA0847 900mm20 A0847-4/4 CPH6621

    8114

    Abstract: CP3313
    Text: CP3313 Ordering number : ENN8114 P-Channel Silicon MOSFET CP3313 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


    Original
    PDF CP3313 ENN8114 900mm2 8114 CP3313

    rl76

    Abstract: ENN7178A 2SJ612
    Text: Ordering number : ENN7178A 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0


    Original
    PDF ENN7178A 2SJ612 2SJ612] 25max rl76 ENN7178A 2SJ612

    RL76

    Abstract: No abstract text available
    Text: Ordering number : ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0 2.5


    Original
    PDF ENN7178 2SJ612 2SJ612] 25max RL76

    CPH6605

    Abstract: No abstract text available
    Text: 注文コード No. N 7 1 8 3 CPH6605 三洋半導体データシート N CPH6605 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチング用 ・低オン抵抗超高速スイッチングの P チャネルおよび P チャネル MOS ドライブ用の小信号 N チャネル


    Original
    PDF CPH6605 900mm2 900mm2 IT00235 IT04068 IT04069 CPH6605

    CPH6605

    Abstract: CPH6605 marking
    Text: Ordering number : ENN7183 CPH6605 N-Channel and P-Channel Silicon MOSFETs CPH6605 Load Switching Applications • [CPH6605] 5 6 0.2 0.15 2.9 4 0.05 0.6 • Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202


    Original
    PDF ENN7183 CPH6605 CPH6605] CPH6605 CPH6605 marking

    TA-3062

    Abstract: A 69254 CPH3313 ta 306-2 ta306 v235s TA-306
    Text: 注文コード No. N 6 9 2 5 CPH3313 No. N 6 9 2 5 20101 新 CPH3313 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original
    PDF CPH3313 900mm2 --10V IT02660 IT02658 900mm2 IT02664 IT02663 TA-3062 A 69254 CPH3313 ta 306-2 ta306 v235s TA-306

    2SJ612-TD

    Abstract: 2SJ612 TA-3522
    Text: 2SJ612 注文コード No. N 7 1 7 8 B 三洋半導体データシート 半導体データシート No.N7178A をさしかえてください。 2SJ612 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


    Original
    PDF 2SJ612 N7178A 250mm2 --10V IT04255 250mm2 IT04260 2SJ612-TD 2SJ612 TA-3522