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    transistor zo 607

    Abstract: ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109
    Text: EC3H02BA Ordering number : ENA1064A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF EC3H02BA ENA1064A S21e2 1006size) A1064-5/5 transistor zo 607 ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109

    A1064

    Abstract: EC3H02BA ECSP1006-3 A1064-1 7039a
    Text: EC3H02BA 注文コード No. N A 1 0 6 4 B 三洋半導体データシート 半導体データシート No. N1064A をさしかえてください。 EC3H02BA NPN エピタキシァルプレーナ型シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用


    Original     		PDF EC3H02BA N1064A S21e2 A1064-5/5 A1064 EC3H02BA ECSP1006-3 A1064-1 7039a

    transistor zo 607

    Abstract: zo 607 MA zo 607 EC3H02C
    Text: Ordering number : ENN6579 EC3H02C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low noise : NF=1.0dB typ f=1GHz . High gain :S21e2=12dB typ (f=1GHz).


    Original     		PDF ENN6579 EC3H02C S21e2 transistor zo 607 zo 607 MA zo 607 EC3H02C

    Untitled

    Abstract: No abstract text available
    Text: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF ENA1064B EC3H02BA S21e2 1006size) A1064-5/5

    EC3H02B

    Abstract: No abstract text available
    Text: 注文コード No. N 6 5 2 3 EC3H02B No. N6523 41000 新 EC3H02B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.0dB typ（f=1GHz） 。 ・高利得である：⏐S21e⏐2=12dB typ（f=1GHz）


    Original     		PDF EC3H02B N6523 S21e2 EC3H02B

    7039a

    Abstract: transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3
    Text: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF EC3H02BA ENA1064B S21e2 1006size) A1064-5/5 7039a transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3

    2SC5488

    Abstract: 62883
    Text: Ordering number:ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN6288 2SC5488 S21e2 2SC5488] 2SC5488 62883

    A1089

    Abstract: No abstract text available
    Text: Ordering number : ENA1089A 2SC5488A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)


    Original     		PDF ENA1089A 2SC5488A S21e2 A1089-7/7 A1089

    Untitled

    Abstract: No abstract text available
    Text: 2SC5488A Ordering number : ENA1089A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)


    Original     		PDF 2SC5488A ENA1089A A1089-7/7

    A1089

    Abstract: No abstract text available
    Text: 2SC5488A Ordering number : ENA1089 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF 2SC5488A ENA1089 A1089-4/4 A1089

    EC3H02B

    Abstract: No abstract text available
    Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .


    Original     		PDF ENN6523 EC3H02B EC3H02B] S21e2 1006size) E-CSP1006-3 EC3H02B

    2SC548

    Abstract: IT01366 2SC5488A A1089
    Text: 2SC5488A 注文コード No. N A 1 0 8 9 三洋半導体データシート N 2SC5488A NPN エピタキシァルプレーナ型シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 特長 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である ：⏐S21e⏐2=12dB typ（f=1GHz）


    Original     		PDF 2SC5488A S21e2 S21e21 A1089-4/4 2SC548 IT01366 2SC5488A A1089

    EC3H02C

    Abstract: No abstract text available
    Text: 注文コード No. N 6 5 7 9 EC3H02C 三洋半導体データシート N EC3H02C 特長 NPN エピタキシァルプレーナ型シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.0dB typ（f=1GHz） 。 。


    Original     		PDF EC3H02C S21e2 EC3H02C

    62882

    Abstract: n628 2SC5488
    Text: 注文コード No. N 6 2 8 8 2SC5488 No. N6288 62299 新 2SC5488 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=12dB typ(f=1GHz)。


    Original     		PDF 2SC5488 N6288 S21e2 62882 n628 2SC5488

    SSFP package

    Abstract: 2SC5488A
    Text: 2SC5488A Ordering number : ENA1089 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF 2SC5488A ENA1089 S21e2 A1089-4/4 SSFP package 2SC5488A

    EC3H02B

    Abstract: No abstract text available
    Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .


    Original     		PDF ENN6523 EC3H02B EC3H02B] S21e2 1006size) E-CSP1006-3 EC3H02B

    2SC5488

    Abstract: TA-1675 62882 62883
    Text: Ordering number:ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN6288 2SC5488 S21e2 2SC5488] 2SC5488 TA-1675 62882 62883

    transistor zo 607

    Abstract: zo 607 MA zo 607 equivalent ZO 607 EC3H02C
    Text: Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications [EC3H02C] 0.5 0.2 0.05 0.2 3 4 2 1 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.6 Bottom View 1.0 0.05 •


    Original     		PDF ENN6579 EC3H02C EC3H02C] S21e2 E-CSP1008-4 transistor zo 607 zo 607 MA zo 607 equivalent ZO 607 EC3H02C