transistor zo 607
Abstract: ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109
Text: EC3H02BA Ordering number : ENA1064A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
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EC3H02BA
ENA1064A
S21e2
1006size)
A1064-5/5
transistor zo 607
ZO 607 MA
zo 607
equivalent ZO 607
3308 TOP MARK IC
890 f 562 ic pdf datasheet
ic 565 application
zo 103 ma
zo 103 ma 75 607
ZO 109
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A1064
Abstract: EC3H02BA ECSP1006-3 A1064-1 7039a
Text: EC3H02BA 注文コード No. N A 1 0 6 4 B 三洋半導体データシート 半導体データシート No. N1064A をさしかえてください。 EC3H02BA NPN エピタキシァルプレーナ型シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用
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EC3H02BA
N1064A
S21e2
A1064-5/5
A1064
EC3H02BA
ECSP1006-3
A1064-1
7039a
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transistor zo 607
Abstract: zo 607 MA zo 607 EC3H02C
Text: Ordering number : ENN6579 EC3H02C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low noise : NF=1.0dB typ f=1GHz . High gain :S21e2=12dB typ (f=1GHz).
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ENN6579
EC3H02C
S21e2
transistor zo 607
zo 607 MA
zo 607
EC3H02C
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Untitled
Abstract: No abstract text available
Text: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
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ENA1064B
EC3H02BA
S21e2
1006size)
A1064-5/5
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EC3H02B
Abstract: No abstract text available
Text: 注文コード No. N 6 5 2 3 EC3H02B No. N6523 41000 新 EC3H02B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である:NF=1.0dB typ(f=1GHz) 。 ・高利得である:⏐S21e⏐2=12dB typ(f=1GHz)
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EC3H02B
N6523
S21e2
EC3H02B
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7039a
Abstract: transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3
Text: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
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EC3H02BA
ENA1064B
S21e2
1006size)
A1064-5/5
7039a
transistor zo 607
A1064
zo 607 MA
zo 607
EC3H02BA
ECSP1006-3
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2SC5488
Abstract: 62883
Text: Ordering number:ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.
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ENN6288
2SC5488
S21e2
2SC5488]
2SC5488
62883
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A1089
Abstract: No abstract text available
Text: Ordering number : ENA1089A 2SC5488A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)
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ENA1089A
2SC5488A
S21e2
A1089-7/7
A1089
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Untitled
Abstract: No abstract text available
Text: 2SC5488A Ordering number : ENA1089A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)
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2SC5488A
ENA1089A
A1089-7/7
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A1089
Abstract: No abstract text available
Text: 2SC5488A Ordering number : ENA1089 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
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2SC5488A
ENA1089
A1089-4/4
A1089
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EC3H02B
Abstract: No abstract text available
Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .
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ENN6523
EC3H02B
EC3H02B]
S21e2
1006size)
E-CSP1006-3
EC3H02B
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2SC548
Abstract: IT01366 2SC5488A A1089
Text: 2SC5488A 注文コード No. N A 1 0 8 9 三洋半導体データシート N 2SC5488A NPN エピタキシァルプレーナ型シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 特長 ・低雑音である:NF=1.0dB typ f=1GHz 。 ・高利得である :⏐S21e⏐2=12dB typ(f=1GHz)
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2SC5488A
S21e2
S21e21
A1089-4/4
2SC548
IT01366
2SC5488A
A1089
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EC3H02C
Abstract: No abstract text available
Text: 注文コード No. N 6 5 7 9 EC3H02C 三洋半導体データシート N EC3H02C 特長 NPN エピタキシァルプレーナ型シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である:NF=1.0dB typ(f=1GHz) 。 。
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EC3H02C
S21e2
EC3H02C
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62882
Abstract: n628 2SC5488
Text: 注文コード No. N 6 2 8 8 2SC5488 No. N6288 62299 新 2SC5488 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である:NF=1.0dB typ f=1GHz 。 ・高利得である:⏐S21e⏐2=12dB typ(f=1GHz)。
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2SC5488
N6288
S21e2
62882
n628
2SC5488
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SSFP package
Abstract: 2SC5488A
Text: 2SC5488A Ordering number : ENA1089 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
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2SC5488A
ENA1089
S21e2
A1089-4/4
SSFP package
2SC5488A
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EC3H02B
Abstract: No abstract text available
Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .
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ENN6523
EC3H02B
EC3H02B]
S21e2
1006size)
E-CSP1006-3
EC3H02B
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2SC5488
Abstract: TA-1675 62882 62883
Text: Ordering number:ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.
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ENN6288
2SC5488
S21e2
2SC5488]
2SC5488
TA-1675
62882
62883
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transistor zo 607
Abstract: zo 607 MA zo 607 equivalent ZO 607 EC3H02C
Text: Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications [EC3H02C] 0.5 0.2 0.05 0.2 3 4 2 1 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.6 Bottom View 1.0 0.05 •
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ENN6579
EC3H02C
EC3H02C]
S21e2
E-CSP1008-4
transistor zo 607
zo 607 MA
zo 607
equivalent ZO 607
EC3H02C
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