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    ISS TRANSISTOR Search Results

    ISS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    ISS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd transistor ISS

    Abstract: smd transistor 26 2SK3902 TRANSISTOR SMD 15a 30A90
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1 2.54


    Original     		2SK3902 O-263 smd transistor ISS smd transistor 26 2SK3902 TRANSISTOR SMD 15a 30A90 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1


    Original     		2SK3902 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2


    Original     		2SK3899 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Transistors IC SMD Type Product specification 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2


    Original     		2SK3900 O-263 PDF

    smd transistor ISS

    Abstract: 2SK3899 2SK38
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		2SK3899 O-263 smd transistor ISS 2SK3899 2SK38 PDF

    smd transistor ISS

    Abstract: 2SK3900
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		2SK3900 O-263 smd transistor ISS 2SK3900 PDF

    smd transistor ISS

    Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)


    Original     		2SK3901 O-263 smd transistor ISS mosfet 20v 30A 2SK3901 SMD Transistor MU PDF

    smd diodes s4 1.5w

    Abstract: PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
    Text: Semelab Limited High Reliability and Screening Options DOC 2624 ISS 8 Contents 1. Introduction. 1 2. Quality Approvals . 2


    Original     		QR209 BS9300 QR216 QR204 MIL-PRF-19500 smd diodes s4 1.5w PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a PDF

    outgoing material inspection format

    Abstract: GL521 GP1UM101XP GP1UM10XP PD49PI M10XP
    Text: ISS CUADD mm—ma OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION f DEVICE SPECIFICATION FOR Infrared Detecting unit for Remote Control MODEL No. GP1UM10XP series V_ ;_ J Specified for


    OCR Scan     		GP1UM10XP ED-02227 500pcs. 000pcs. RUD2404 outgoing material inspection format GL521 GP1UM101XP PD49PI M10XP PDF

    transistor 2N4033

    Abstract: 2N4031 2N4033 2N4032 2N4030
    Text: N AMER PH ILI PS/ DI SC RET E bTE T> • ^1,33^31 DD2fil4t ISS M A P X _ ' _ \ ^2N 4030 to 2N 4033 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes primarily intended for large signal, low-noise, low-power


    OCR Scan     		2N4030 2N4033 2N4031 2N4032 2N4032 2N4031 transistor 2N4033 2N4033 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR M EDIU M POWER HIGH GAIN TRANSISTOR ISS U E 1 - SEPT EM BER 1997 _ FZT1053A _ _ FEATURES VCE0= 75 V 4.5 Am p Continuous Current 10 Am p Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance;


    OCR Scan     		OT223 FZT1053A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C


    OCR Scan     		2N6038 O-126 15OOO PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA92 ISS U E 2 - JA N U A R Y 1996 O FEATURES * High breakdown voltage APPLICATIONS * Suitable for video output stages in TV sets and switch mode power supplies C O M PLIM EN TARY TYPE PARTMARKING DETAIL -


    OCR Scan     		OT223 FZTA92 FZTA42 -200V, -20mA, -10mA, 20MHz FMMTA92 PDF

    Untitled

    Abstract: No abstract text available
    Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISS U E 3 - N O V EM B ER 1995_ FEATURES * 625mW POWER DISSIPATIO N * * * * * lc C O N T 3 A 12A Peak Pulse Current Excellent HF£ Characteristics Up To 12A (pulsed)


    OCR Scan     		FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 625mW 100mA FMMT618 PDF

    2SK546

    Abstract: No abstract text available
    Text: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


    OCR Scan     		1790B l790B 2SK546 -10UA SC-43 2SK546 PDF

    irf360lc

    Abstract: ID 9302 IRFP360LC IRFPE30
    Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω


    Original     		IRFP360LC IRFPE30 irf360lc ID 9302 IRFP360LC IRFPE30 PDF

    irf460lc

    Abstract: IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    Original     		IRFP460LC stanFPE30 irf460lc IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L PDF

    IRFPC60LC

    Abstract: IRFPE30
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    Original     		IRFPC60LC stanFPE30 IRFPC60LC IRFPE30 PDF

    2N3553

    Abstract: No abstract text available
    Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g


    OCR Scan     		2N3553 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 27E D 4302271 0Q1S7DD '¿M m m i* I HAS •*rm. ir-tt-szs Amplifier Transistors Continued Junction FETs — P-Channel 9fs /imho PACKAGE" Min > "> PART NUMBER >DSS mA Min Max Min BVqsS V Min C|ss ISS Max •gss nA Max Max Max pF


    OCR Scan     		2N2609 2N5460 2N5461 2N5462 2N5463 2N5464 2N5465 32typ 31typ 100Hz PDF

    2SK546

    Abstract: No abstract text available
    Text: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


    OCR Scan     		1790B l790B 2SK546 -10uA 2034/2034A SC-43 7tlt17D7b 2SK546 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω


    Original     		IRFP350LC 08-Mar-07 PDF

    IRFP360LC

    Abstract: IRFPE30
    Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω


    Original     		IRFP360LC 12-Mar-07 IRFP360LC IRFPE30 PDF

    IRF350LC

    Abstract: IRFP350LC IRFPE30
    Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω


    Original     		IRFP350LC 12-Mar-07 IRF350LC IRFP350LC IRFPE30 PDF