Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ISM MOSFET Search Results

    ISM MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ISM MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WCs MARKING

    Abstract: ETC1-1-13 PE4128
    Text: ADVANCE INFORMATION PE4128 High Linearity Quad MOSFET Mixer for WCS and 2.4 GHz ISM Band Applications Product Description The PE4128 is a high linearity, passive Quad MOSFET Mixer for WCS and 2.4 GHz ISM applications exhibiting high dynamic range performance over an LO drive range


    Original     		PDF PE4128 PE4128 WCs MARKING ETC1-1-13

    M27500-16RC1509

    Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100H M27500-16RC1509 ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf

    G2225X7R225KT3AB

    Abstract: m27500 transfer impedance
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5

    Transistor S 40442

    Abstract: 78570 IRF27 F 78570 74605
    Text: VFT150-50DE RF MOSFET POWER TRANSISTOR PACKAGE STYLE .65 X .580 PLASTIC IRF275 DESCRIPTION: The VFT150-50DE is a broad band RF MOSFET packaged in a low cost high power plastic package. It is ideal for ISM, HF & VHF Communications, & FM Broadcast. FEATURES:


    Original     		PDF VFT150-50DE IRF275 VFT150-50DE 175MHz, 175MHz Vg176 Transistor S 40442 78570 IRF27 F 78570 74605

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    arco 406

    Abstract: No abstract text available
    Text: ARF521 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.


    Original     		PDF ARF521 150MHz 150MHz. 81MHz 470nH VK200-4B ARF521 arco 406

    VRF150

    Abstract: hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF150 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V


    Original     		PDF 150MHz VRF150 150MHz, 30MHz, VRF150 250mA, hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    garage door 300mhz transmitter circuits diagram

    Abstract: XE1231 circuit diagram door opener 433mhz rx tx SX1212 SX1282 RF REMOTE CONTROLLER circuit diagram of wireless door sensor 433Mhz PIC16F631 SX1231 tx 434 ask cr2032
    Text: RF Overview September 2010 Semtech ISM Band Products Agenda -Introduction -Roadmap Update -Applications -Tools -Q&A Design & Application Center and Sales Office Sales & Support Office Semtech Confidential 2 Introduction : Worldwide infrastructure of design, applications, support


    Original     		PDF 868MHz 50KHz 25KHz 100KHz 200KHz 378KHz 13dBm garage door 300mhz transmitter circuits diagram XE1231 circuit diagram door opener 433mhz rx tx SX1212 SX1282 RF REMOTE CONTROLLER circuit diagram of wireless door sensor 433Mhz PIC16F631 SX1231 tx 434 ask cr2032

    ATC100B471JT200XT

    Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1

    D260-4118-0000

    Abstract: 0119A 0190A
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A

    VRF151

    Abstract: vertical mosfet RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF151 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V


    Original     		PDF 175MHz VRF151 175MHz, 30MHz, VRF151 vertical mosfet RF POWER VERTICAL MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 25cale

    ARF521

    Abstract: arco mica trimmer arco 406 700B C11-C13 VK200-4B mica trimmer
    Text: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:


    Original     		PDF ARF521 150MHz ARF521 150MHz. 81MHz arco mica trimmer arco 406 700B C11-C13 VK200-4B mica trimmer

    Untitled

    Abstract: No abstract text available
    Text: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:


    Original     		PDF ARF520 ARF520

    arco trimmer

    Abstract: No abstract text available
    Text: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:


    Original     		PDF ARF521 150MHz ARF521 150MHz. 81MHz arco trimmer

    NEC protocol

    Abstract: NEC Infrared protocol application note philips RC5 protocol RC5 IR NEC IR protocol NEC IR philips RC5 rc5 protocol RC5 command reference HCS08/rc5 protocol
    Text: Freescale Semiconductor Application Note Document Number: AN4152 Rev. 0.0 , 06/2010 Recommendations for Implementing an IR Blaster on MC1321x and MC9S08QE128 Based IEEE 802.15.4 Wireless Nodes 1 Introduction The availability of low-cost 2.4 GHz ISM band IEEE


    Original     		PDF AN4152 MC1321x MC9S08QE128 HCS08A NEC protocol NEC Infrared protocol application note philips RC5 protocol RC5 IR NEC IR protocol NEC IR philips RC5 rc5 protocol RC5 command reference HCS08/rc5 protocol

    arco 406

    Abstract: arco mica trimmer ARF520 700B C11-C13 VK200-4B mosfet class ab rf mica trimmer
    Text: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:


    Original     		PDF ARF520 ARF520 arco 406 arco mica trimmer 700B C11-C13 VK200-4B mosfet class ab rf mica trimmer

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    Untitled

    Abstract: No abstract text available
    Text: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:


    Original     		PDF ARF521 150MHz ARF521 150MHz. 81MHz

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN7012 N-Channel Silicon MOSFET MCH6405 ISMÊYOl Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 2193A Specifications Absolute Maximum Ratings at Ta=25°C


    OCR Scan     		PDF ENN7012 MCH6405 900mm2

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6672~] N-Channel Silicon MOSFET 2SK3449 ISM lYO i DC / DC Converter Applications Package Dimensions Features unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2190 [2SK3449] 3.3, 0,7 1 : Source 2 : Drain 3 : Gate


    OCR Scan     		PDF ENN6672~ 2SK3449 2SK3449] -126M

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number : ENNSSW N-Channel Silicon MOSFET 5HN01C ISMÊYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2091A [5H N 0 1C ] 0.4 0.16, ^ = 3 .Oto 0.1


    OCR Scan     		PDF 5HN01C