isd 2530
Abstract: isd1800 ISD1810 ISD ChipCorder Application Information ISD DIGITAL CHIPCORDER chipcorder isd chipcorder application notes ISD1810P ISD1810X INFORMATION STORAGE DEVICES
Text: ISD1810 Single-Chip, Single-Message Voice Record/Playback Device 8- to 16-Second Durations Advance Information GENERAL DESCRIPTION Information Storage Devices’ ISD1810 ChipCorder provides high-quality, single-chip, single-message, record/playback solution with user-selectable durations of 8 to 16 seconds. The CMOS devices include an on-chip oscillator with external control ,
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ISD1810
16-Second
ISD1810
2200898D1510
isd 2530
isd1800
ISD ChipCorder Application Information
ISD DIGITAL CHIPCORDER
chipcorder
isd chipcorder application notes
ISD1810P
ISD1810X
INFORMATION STORAGE DEVICES
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ISD ChipCorder Application Information
Abstract: ISD1810 ISD1810X chipcorder ISD1800 ISD1810P 40 pin record and play INFORMATION STORAGE DEVICES
Text: ISD1810 Single-Chip, Single-Message Voice Record/Playback Device 8- to 16-Second Durations Advance Information GENERAL DESCRIPTION Information Storage Devices’ ISD1810 ChipCorder provides high-quality, single-chip, single-message, record/playback solution with user-selectable durations of 8 to 16 seconds. The CMOS devices include an on-chip oscillator with external control ,
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ISD1810
16-Second
ISD1810
2200898D1510
ISD ChipCorder Application Information
ISD1810X
chipcorder
ISD1800
ISD1810P
40 pin record and play
INFORMATION STORAGE DEVICES
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ISD1800
Abstract: ISD DIGITAL CHIPCORDER isd 2530 ISD ChipCorder Application Information chipcorder ISD1810 ISD1810P ISD1810X
Text: ISD1810 Single-Chip, Single-Message Voice Record/Playback Device 8- to 16-Second Durations Advance Information GENERAL DESCRIPTION Information Storage Devices’ ISD1810 ChipCorder provides high-quality, single-chip, single-message, record/playback solution with user-selectable durations of 8 to 16 seconds. The CMOS devices include an on-chip oscillator with external control ,
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ISD1810
16-Second
ISD1810
2200898D1510
ISD1800
ISD DIGITAL CHIPCORDER
isd 2530
ISD ChipCorder Application Information
chipcorder
ISD1810P
ISD1810X
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11n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary 11 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in
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11N90
O-220
11N90
O-220F1
QW-R502-497
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11n90
Abstract: isd 2530 MOSFET 900V TO-220
Text: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in
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11N90
11N90
QW-R502-497
isd 2530
MOSFET 900V TO-220
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11n90
Abstract: isd 2530
Text: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in
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11N90
11N90
QW-R502-497
isd 2530
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11N90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 11N90 Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in
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11N90
11N90
QW-R502-497
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ISD1810S
Abstract: No abstract text available
Text: ADVANCED INFORMATION ISD1810 SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 8- TO 16-SECOND DURATIONS Advanced Information Please check with Winbond for datasheet updates -1- Publication Release Date: February 2003 Revision 0.1 ISD1810 1. GENERAL DESCRIPTION
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ISD1810
16-SECOND
ISD1810
ISD1810S
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JESD97
Abstract: STS15N4LL
Text: STS15N4LL N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LL 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description
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STS15N4LL
JESD97
STS15N4LL
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JESD97
Abstract: STS15N4LLF3
Text: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description
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STS15N4LLF3
JESD97
STS15N4LLF3
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Untitled
Abstract: No abstract text available
Text: STSJ80N4LL N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ80N4LL 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STSJ80N4LL
STSJ80N4LL
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JESD97
Abstract: STL80N4LL
Text: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
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STL80N4LL
JESD97
STL80N4LL
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Untitled
Abstract: No abstract text available
Text: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
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STL80N4LL
STL80N4LL
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STL80N4LLF3
Abstract: JESD97 L80N4LLF3 st MARKING E4
Text: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
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STL80N4LLF3
STL80N4LLF3
JESD97
L80N4LLF3
st MARKING E4
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Untitled
Abstract: No abstract text available
Text: SUN12A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.55Ω (Typ.) Low gate charge: Qg=38nC (Typ.) Low reverse transfer capacitance: Crss=15pF (Typ.) Lower EMI noise RoHS compliant device
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SUN12A60F
O-220F-3L
SUN12A60
SDB20D45
24-JUL-14
KSD-T0O165-000
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ISD1800
Abstract: ISD1806 balanced electret mic preamp ISD18xx ISD ChipCorder Application Information isd chipcorder application notes 300MIL ISD1810 ISD1810S HKZ 121 E
Text: PRELIMINARY ISD1800 SERIES SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION -1- Publication Release Date: June 7, 2005 Revision 0.3 ISD1800 SERIES 1. GENERAL DESCRIPTION Winbond’s ISD1800 ChipCorder provides high-quality, single chip, single-message, record/playback
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ISD1800
16-SECOND
ISD1806
balanced electret mic preamp
ISD18xx
ISD ChipCorder Application Information
isd chipcorder application notes
300MIL
ISD1810
ISD1810S
HKZ 121 E
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Untitled
Abstract: No abstract text available
Text: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced ) s ( ct u d
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STS15N4LLF3
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JESD97
Abstract: STSJ80N4LLF3
Text: STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ80N4LLF3 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STSJ80N4LLF3
JESD97
STSJ80N4LLF3
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Untitled
Abstract: No abstract text available
Text: STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ80N4LLF3 40V 0.005Ω 18A(1) ) s ( ct 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STSJ80N4LLF3
STSJ80N4LLF3
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Untitled
Abstract: No abstract text available
Text: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •
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STL80N4LLF3
STL80N4LLF3
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ISD1800
Abstract: isd chipcorder application notes HKZ 121 E voice record
Text: PRELIMINARY ISD1800 SERIES SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION -1- Publication Release Date: June 7, 2005 Revision 0.3 ISD1800 SERIES 1. GENERAL DESCRIPTION Winbond’s ISD1800 ChipCorder provides high-quality, single chip, single-message, record/playback
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ISD1800
16-SECOND
isd chipcorder application notes
HKZ 121 E
voice record
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balanced electret mic preamp
Abstract: HKZ 121 E 300MIL 600MIL I1806X ISD1810 HKZ 121 16-SECOND ic 74175 pin diagram
Text: PRELIMINARY I1800 SERIES SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION -1- Publication Release Date: May 2003 Revision 0.0 I1800 SERIES 1. GENERAL DESCRIPTION Winbond’s I1800 ChipCorder provides high-quality, single chip, single-message, record/playback
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I1800
16-SECOND
balanced electret mic preamp
HKZ 121 E
300MIL
600MIL
I1806X
ISD1810
HKZ 121
ic 74175 pin diagram
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isd1806
Abstract: ISD18xx ISD1806X HKZ 121 E ISD1800 Voice Record
Text: PRELIMINARY ISD1800 SERIES SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION -1- Publication Release Date: March 30, 2005 Revision 0.1 ISD1800 SERIES 1. GENERAL DESCRIPTION Winbond’s ISD1800 ChipCorder provides high-quality, single chip, single-message, record/playback
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ISD1800
16-SECOND
isd1806
ISD18xx
ISD1806X
HKZ 121 E
Voice Record
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Untitled
Abstract: No abstract text available
Text: _ea_ Section A-A Echao rffnia_r r ô — 1— ^p - R 0,3 « l| ^— X _ 13,94 1 _ 1,2 1 20,32 1 . 1,8 > DESCRIPTION C o n n e c t o r e s p e c ia lly d e s ig n e d f o r SMT "te ch n o lo g y EMV co m p a tib le a n d in a c c o r d a n c e w ith ISD 78 1 6 -2
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