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    ISD 2100 Search Results

    ISD 2100 Result Highlights (3)

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    CST2-100LB Coilcraft Inc Current Sense Transformer, 20A, 1:100, ROHS COMPLIANT Visit Coilcraft Inc Buy
    CST2-100LC Coilcraft Inc Current Sense Transformer, 20A, 1:100, ROHS COMPLIANT Visit Coilcraft Inc Buy
    CST2-100L Coilcraft Inc Current sensor, SMT, RoHS Visit Coilcraft Inc
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    ISD 2100 Price and Stock

    Nuvoton Technology Corp NM-ISD2100Q

    KIT DEV/DEMO ISD2100 DEMO2100
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    DigiKey NM-ISD2100Q Box 2 1
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    Nuvoton Technology Corp NG-ISD2100Q

    ISD2100 QFN STANDALONE GANG PROG
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    Nuvoton Technology Corp NW-ISD2100S

    ISD2100 SOP SINGLE CHIP PROGRAMM
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    Nuvoton Technology Corp NW-ISD2100Q

    ISD21XX QFN SINGLE CHIP PROGRAMM
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    Nuvoton Technology Corp NG-ISD2100S

    ISD2100 SOP STANDALONE GANG PROG
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    ISD 2100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ISD-2100_GANG_PROG_Q Nuvoton Technology Development Boards, Kits, Programmers - Programmers, Emulators, and Debuggers - ISD2100 QFN STANDALONE GANG PROG Original PDF

    ISD 2100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISD-9200

    Abstract: ISD-9201
    Text: ISD-9200 Series SPDT Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough


    Original     		PDF ISD-9200 ISD-9200 ISD-9201 ISD-9201

    isd 2100

    Abstract: No abstract text available
    Text: ISD-9900 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough


    Original     		PDF ISD-9900 ISD-9901 ISD-9902 isd 2100

    ISD-9110

    Abstract: ISD-9111 ISD-9112
    Text: ISD-9110 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough


    Original     		PDF ISD-9110 ISD-9110 ISD-9111 ISD-9112 Isol00 ISD-9111 ISD-9112

    IRFP90N20DPBF

    Abstract: 035H AN1001 IRFPE30 irfp90n20d
    Text: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		PDF IRFP90N20DPbF AN1001) O-247AC IRFP90N20DPBF 035H AN1001 IRFPE30 irfp90n20d

    Irfp90n20d

    Abstract: 035H AN1001 IRFPE30 IRFP90N20DPbF irfp90n20
    Text: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		PDF IRFP90N20DPbF AN1001) O-247AC Irfp90n20d 035H AN1001 IRFPE30 IRFP90N20DPbF irfp90n20

    STY140NS10

    Abstract: No abstract text available
    Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™


    Original     		PDF STY140NS10 MAX247â STY140NS10

    Untitled

    Abstract: No abstract text available
    Text: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		PDF IRFP90N20DPbF AN1001) O-247AC

    STY140NS10

    Abstract: MAX247 D140A
    Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY


    Original     		PDF STY140NS10 MAX247TM STY140NS10 MAX247 D140A

    STY140NS10

    Abstract: Max247TM MAX247
    Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™


    Original     		PDF STY140NS10 MAX247TM STY140NS10 Max247TM MAX247

    721a

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N95 Power MOSFET 9A, 950V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF O-247 9N95L-T47-T 9N95G-T47-T O-24ues QW-R502-721 721a

    Untitled

    Abstract: No abstract text available
    Text: LTC3453 Synchronous Buck-Boost High Power White LED Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 3453 is a synchronous buck-boost DC/DC converter optimized for driving up to 4 white LEDs at a combined current of up to 500mA from a single Li-Ion


    Original     		PDF LTC3453 500mA LT3466 LT3479 3453fa

    high power white led driver circuit diagram

    Abstract: nichia NSCW100 LED power INDUCTOR tdk BOBBIN white led driver IDCS-2512 LTC3453 LTC3453EUF MBRM120T3 MO-220
    Text: LTC3453 Synchronous Buck-Boost High Power White LED Driver U FEATURES DESCRIPTIO • The LTC 3453 is a synchronous buck-boost DC/DC converter optimized for driving up to 4 white LEDs at a combined current of up to 500mA from a single Li-Ion battery input. The regulator operates in either synchronous buck, synchronous boost, or buck-boost mode,


    Original     		PDF LTC3453 500mA LT3466 LT3479 3453fa high power white led driver circuit diagram nichia NSCW100 LED power INDUCTOR tdk BOBBIN white led driver IDCS-2512 LTC3453 LTC3453EUF MBRM120T3 MO-220

    24NM60N

    Abstract: IPAK
    Text: STFI24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features Order code VDSS @Tjmax RDS(on) max. ID STFI24NM60N 650 V < 0.19 Ω 17 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance


    Original     		PDF STFI24NM60N 24NM60N IPAK

    9n90

    Abstract: N-channel MOSFET to-247 TO-220F1 IGSS
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Preliminary Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF O-247 O-220F O-220F1 QW-R502-217 9n90 N-channel MOSFET to-247 TO-220F1 IGSS

    STW9NB80

    Abstract: No abstract text available
    Text: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STW9NB80 O-247 STW9NB80

    035H

    Abstract: IRFPE30 4.5V TO 100V INPUT REGULATOR
    Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50APbF O-247AC 035H IRFPE30 4.5V TO 100V INPUT REGULATOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use


    Original     		PDF 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-entarily, QW-R502-217

    MOSFET 800V 3A

    Abstract: STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram
    Text: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V < 1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STW9NB80 O-247 MOSFET 800V 3A STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 9N95 Power MOSFET 9 A, 9 5 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF O-247 QW-R502-721

    Untitled

    Abstract: No abstract text available
    Text: STFI24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Order code VDSS @Tjmax RDS(on) max. ID STFI24NM60N 650 V < 0.19 Ω 17 A • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original     		PDF STFI24NM60N O-281)

    irfp90n20

    Abstract: irfp90n20d AN1001
    Text: PD - 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF 4301A IRFP90N20D AN1001) O-247AC irfp90n20 irfp90n20d AN1001

    Untitled

    Abstract: No abstract text available
    Text: PD - 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF 4301A IRFP90N20D AN1001) O-247AC

    f3nk80z

    Abstract: P3NK80Z D3NK80Z STP3NK80Z f3nk80z DATA STD3NK80ZT4 STD3NK80Z STD3NK80Z-1 STF3NK80Z d3nk
    Text: STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800


    Original     		PDF STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 O-220/FP/DPAK/IPAK STP3NK80Z STD3NK80Z f3nk80z P3NK80Z D3NK80Z f3nk80z DATA STD3NK80ZT4 STD3NK80Z-1 STF3NK80Z d3nk

    ALCATEL 2840

    Abstract: zkb* vac 2840 alcatel lts 543 series pin diagram 3AK7 alcatel sic alcatel ilc 0.5 MIETEC CMOS D1LF f0-250
    Text: M T C - 2 0 1 7 2 'S' Interface Circuit for ISD N SIC Data Sheet & Reference Manual Rev. 1.0 August 1996 Application Specific Standard Products Fe atu re s • Single chip 4 w ire So-interface for ISDN • Basic access at 144 kbits/s, with 2B+D • Com plying with CCITT 1.430


    OCR Scan     		PDF 0209a ALCATEL 2840 zkb* vac 2840 alcatel lts 543 series pin diagram 3AK7 alcatel sic alcatel ilc 0.5 MIETEC CMOS D1LF f0-250